Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications
Abstract
:1. Introduction
2. Materials and Methods
2.1. Thin Films Deposition
2.1.1. NiO Films Preparation
2.1.2. TiO2 Films Preparation
2.2. Fabrication of NiO:N/TiO2Heterojunction
2.3. Thin Films and Device Characterization
3. Results and Discussion
3.1. Thin Films Properties
3.1.1. Properties of NiO and NiO:NThin Films
NiO Thin Films
NiO:N Thin Films
3.1.2. Properties of TiO2Thin Film
3.2. Characterization of the p-NiO:N/n-TiO2Diode
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Depos. Techn. | Tsub (°C) | D (nm) | TT | Optical Properties TVIS/Egap Direct (Egap Indirect) | Resistivity or Resistance | Ref. | |
---|---|---|---|---|---|---|---|
Chemical solution | 280 | 10 | - | NiO | - | 7.1 MΩcm | [39] |
NiO:N | 80–82%/- | 4.8 MΩcm | |||||
Sol-gel | 120 | 200 | 450 °C 1 h | NiO | ~70%/4 eV (3.5 eV) | - | [37] |
NiO:N | 50–70%/3.8 eV (3.25 eV) | - | |||||
Spray techn. | 350 | 720–900 | NiO | ~40–60%/3.5 eV (3.41 eV) | 3.8 kΩcm | [38] | |
NiO:N | 30–50%/3.45 eV | 1.7 kΩcm | |||||
RF MS | 100–400 | 300 | - | NiO | ~90%/3.53 eV | 28.3 Ω | [40] |
NiO:N | 90%/3.5 eV | 28 Ω | |||||
DC MS | RT | 300 | NiO: | ~30–40%/3.6 eV | - | [32] | |
NiO:N | <40%/3.3 eV (2.3 eV) | - | |||||
RF S | RT | ~150 | NiO | ~7%/3.15 eV | 23 kΩ | This work | |
NiO:N | 45–70%/3.67 eV (2.72 eV) | >100 kΩ |
Films | Deposition Parameters | Structural Properties | Optical Properties | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Flow Rates (%) | d (nm) | D. R. (nm/min) | 2θ (Degree) | D (nm) | εL (×10−2) | T (%) (@550 nm) | Direct Egap (eV) | Indirect Egap (eV) | EU (meV) | ||||
Ar | O2 | N2 | |||||||||||
NiO | P0 | 50 | 50 | 0 | 144 | 1.06 | 42.58 | 5.24 | 1.78 | 4.2 | 3.15 | - | 2734 |
NiO:N | P1 | 50 | 40 | 10 | 128 | 1.52 | 42.65 | 6.15 | 1.20 | 51.7 | 3.65 | 2.56 | 933 |
P2 | 50 | 25 | 25 | 133 | 1.05 | 42.71 | 9.14 | 1.15 | 49.1 | 3.67 | 2.72 | 592 | |
P3 | 50 | 10 | 40 | 159 | 0.94 | 42.70 | 6.69 | 1.32 | 29.3 | 3.59 | 2.50 | 830 | |
P4 | 6 | 47 | 47 | 142 | 0.64 | 42.64 | 7.16 | 1.39 | 51.2 | 3.65 | 2.74 | 598 |
JS (A) | RS (Ohm) | n | Φb (eV) | |||||
---|---|---|---|---|---|---|---|---|
Before TT | After TT | Before TT | After TT | Before TT | After TT | Before TT | After TT | |
I–V method | 5.0 × 10−9 | 2.8 × 10−10 | 8.5 × 102 | 1.4 × 104 | 4.6 | 4.4 | 0.91 | 0.99 |
Cheung’s method | 1.5 × 10−6 | 1.9 × 10−7 | 7.2 × 102 | 3.0 × 103 | 7.6 | 8.4 | 0.77 | 0.82 |
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Aivalioti, C.; Papadakis, A.; Manidakis, E.; Kayambaki, M.; Androulidaki, M.; Tsagaraki, K.; Pelekanos, N.T.; Stoumpos, C.; Modreanu, M.; Crăciun, G.; et al. Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications. Electronics 2021, 10, 988. https://doi.org/10.3390/electronics10090988
Aivalioti C, Papadakis A, Manidakis E, Kayambaki M, Androulidaki M, Tsagaraki K, Pelekanos NT, Stoumpos C, Modreanu M, Crăciun G, et al. Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications. Electronics. 2021; 10(9):988. https://doi.org/10.3390/electronics10090988
Chicago/Turabian StyleAivalioti, Chrysa, Alexandros Papadakis, Emmanouil Manidakis, Maria Kayambaki, Maria Androulidaki, Katerina Tsagaraki, Nikolaos T. Pelekanos, Constantinos Stoumpos, Mircea Modreanu, Gabriel Crăciun, and et al. 2021. "Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications" Electronics 10, no. 9: 988. https://doi.org/10.3390/electronics10090988