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Article
Peer-Review Record

Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga2O3 Field-Effect Transistors: A Simulation Study

Electronics 2022, 11(15), 2323; https://doi.org/10.3390/electronics11152323
by Chaochao Liu, Hao He, Xinlong Zhou and Wenjun Liu *
Reviewer 1:
Reviewer 2: Anonymous
Electronics 2022, 11(15), 2323; https://doi.org/10.3390/electronics11152323
Submission received: 27 June 2022 / Revised: 21 July 2022 / Accepted: 22 July 2022 / Published: 26 July 2022
(This article belongs to the Section Semiconductor Devices)

Round 1

Reviewer 1 Report

The paper is well written & results are discussed very clearly. I recommend publishing this manuscript in Electronics. 

Author Response

Thank you so much for your careful check.

Reviewer 2 Report

The authors approached the important problem of minimizing the excessive heat of the promising FET beta-Ga2O3. They used a well-suited software to perform simulations of the heat transport that depends on the substrate. The work is interesting, manuscript is well written and reports new results showing the direction of the further development. I recommend it for publication in Electronics after the authors consider the following minor issues:

1. Figure of the 3D model setup would be useful.

2. From Fig.4 it seems that the value of Ksub when Tmax decreases slowly should be 30, not 300. Maybe an inset with the zoomed region near 300 woul be useful. It is also interesting what happens at 30, why there is such a change in the slope?

Author Response

Please see the attachment。

Author Response File: Author Response.pdf

Reviewer 3 Report

The Author presents a simulated study of the impacts of substrate and GI on the thermal distribution of beta-Ga2O3 FET. The investigation is interesting, however, the lack of background experimental results might mislead the readers. Please improve the manuscript upon addressing the questions below:

1. How the author considers doping concentration profile of 2x10^18/cm3? Did the author performed any Hall effect measurements to support TCAD simulation?

2. The 100 nm thick beta-Ga2O3 is amorphous of crystalline? Also, because of this thickness, one might expect huge GI/beta-Ga2O3 interface roughness, did the author consider any protruded interface and its impact on thermal distribution? AFM film roughness data might support in this case.

3. The author did not present simulated/measured transfer/output characteristics with their proposed substrate conditions. I would recommend these data should present in the revised manuscript.

Author Response

Please see the attachment。

Author Response File: Author Response.pdf

Round 2

Reviewer 3 Report

The author answered the question adequately. I would recommend the manuscript to be published.

Author Response

Thank you so much for your comments.

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