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Article

A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process

1
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Hangzhou Zhongke Microelectronics Co., Ltd., Hangzhou 310053, China
*
Author to whom correspondence should be addressed.
Electronics 2022, 11(18), 2828; https://doi.org/10.3390/electronics11182828
Submission received: 30 July 2022 / Revised: 1 September 2022 / Accepted: 2 September 2022 / Published: 7 September 2022

Abstract

In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (Δ Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (σ/μ) is 0.1%. The charge-pump core area is 0.308 mm2, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.
Keywords: closed-loop charge pump; PVT robust; PWM modulation; process corner detection closed-loop charge pump; PVT robust; PWM modulation; process corner detection

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MDPI and ACS Style

Ma, X.; Wang, L.; Yu, J. A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process. Electronics 2022, 11, 2828. https://doi.org/10.3390/electronics11182828

AMA Style

Ma X, Wang L, Yu J. A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process. Electronics. 2022; 11(18):2828. https://doi.org/10.3390/electronics11182828

Chicago/Turabian Style

Ma, Xinyi, Liangkun Wang, and Jiaqing Yu. 2022. "A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process" Electronics 11, no. 18: 2828. https://doi.org/10.3390/electronics11182828

APA Style

Ma, X., Wang, L., & Yu, J. (2022). A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process. Electronics, 11(18), 2828. https://doi.org/10.3390/electronics11182828

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