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Journal: Electronics, 2022
Volume: 11
Number: 259

Article: High-Performance InGaAs HEMTs on Si Substrates for RF Applications
Authors: by Bo Wang, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding and Zhi Jin
Link: https://www.mdpi.com/2079-9292/11/2/259

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