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Volume 11
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10.3390/electronics11060944
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Article

Analysis of HBM Failure in 3D NAND Flash Memory

by
Biruo Song
1,2,3,
Zhiguo Li
3,
Xin Wang
3,
Xiang Fu
3,
Fei Liu
1,
Lei Jin
1,2,3 and
Zongliang Huo
1,2,3,*
1
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Yangtze Memory Technologies Co., Ltd., Wuhan 430205, China
*
Author to whom correspondence should be addressed.
Electronics 2022, 11(6), 944; https://doi.org/10.3390/electronics11060944
Submission received: 10 January 2022 / Revised: 4 March 2022 / Accepted: 9 March 2022 / Published: 18 March 2022
(This article belongs to the Section Microelectronics)
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Abstract

Electrostatic discharge (ESD) events are the main factors impacting the reliability of NAND Flash memory. The behavior of human body model (HBM) failure and the corresponding physical mechanism of 3D NAND Flash memory are investigated in this paper. A catastrophic burn-out failure during HBM zapping is first presented. Analysis shows that NMOS fingers’ local heating induced by inhomogeneous substrate resistance Rsub and local heating induced by the drain contact and 3D stacked IC (SIC) structure lead to the failure. Therefore, a new approach is proposed to reduce local heat generation. Finally, by increasing N+ length (NPL) and introducing a novel contact strip, the silicon result shows enhanced ESD robustness.
Keywords: electrostatic discharge (ESD); human body model (HBM); transmission line pulse (TLP); technology computer aided design (TCAD); 3D NAND Flash memory electrostatic discharge (ESD); human body model (HBM); transmission line pulse (TLP); technology computer aided design (TCAD); 3D NAND Flash memory

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MDPI and ACS Style

Song, B.; Li, Z.; Wang, X.; Fu, X.; Liu, F.; Jin, L.; Huo, Z. Analysis of HBM Failure in 3D NAND Flash Memory. Electronics 2022, 11, 944. https://doi.org/10.3390/electronics11060944

AMA Style

Song B, Li Z, Wang X, Fu X, Liu F, Jin L, Huo Z. Analysis of HBM Failure in 3D NAND Flash Memory. Electronics. 2022; 11(6):944. https://doi.org/10.3390/electronics11060944

Chicago/Turabian Style

Song, Biruo, Zhiguo Li, Xin Wang, Xiang Fu, Fei Liu, Lei Jin, and Zongliang Huo. 2022. "Analysis of HBM Failure in 3D NAND Flash Memory" Electronics 11, no. 6: 944. https://doi.org/10.3390/electronics11060944

APA Style

Song, B., Li, Z., Wang, X., Fu, X., Liu, F., Jin, L., & Huo, Z. (2022). Analysis of HBM Failure in 3D NAND Flash Memory. Electronics, 11(6), 944. https://doi.org/10.3390/electronics11060944

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