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Journal: Electronics, 2023
Volume: 12
Number: 2551
Article:
Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness
Authors:
by
Hao Liu, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu and Longxing Shi
Link:
https://www.mdpi.com/2079-9292/12/11/2551
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