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Journal: Electronics, 2023
Volume: 12
Number: 4482
Article:
Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiNx GaN MISFET with In Situ H2/N2 Plasma Pretreatment
Authors:
by
Chengyu Huang, Jinyan Wang, Maojun Wang, Jin He, Mengjun Li, Bin Zhang and Yandong He
Link:
https://www.mdpi.com/2079-9292/12/21/4482
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