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Journal: Electronics, 2024
Volume: 13
Number: 1831

Article: Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation
Authors: by Xiaohong Zhao, Hongwei Wang, Yihao Zhang, You Chen, Siyi Cheng, Xing Wang, Fang Peng, Yongjian Yang, Guannan Tang, Yurong Bai and Shaowei Sun
Link: https://www.mdpi.com/2079-9292/13/10/1831

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