Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions
Abstract
:1. Introduction
2. Experimental Setup
3. Results and Discussion
3.1. Degradation Characteristics of SiC MOSFET under Heavy Ion Irradiation
- Atomic displacement: defects introduced by atomic displacement in SiO2 caused by irradiation.
- Chemical bond breakage: defects introduced by chemical bond breakage in SiO2 caused by electrical stress.
3.2. Temperature Synergy Effect
- Voltage drop on the gate oxide layer, caused by the charge that generates the strong inversion layer.
- Flat band voltages. The second and third terms are the flat band voltages of the MOSFET device.
- The surface potential is ϕs = 2ϕfp, where a strong inversion layer begins to form at the interface. The ϕfp formula can be expressed as follows:
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Liu, C.; Guo, G.; Shi, H.; Zhang, Z.; Li, F.; Zhang, Y.; Han, J. Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions. Electronics 2024, 13, 3402. https://doi.org/10.3390/electronics13173402
Liu C, Guo G, Shi H, Zhang Z, Li F, Zhang Y, Han J. Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions. Electronics. 2024; 13(17):3402. https://doi.org/10.3390/electronics13173402
Chicago/Turabian StyleLiu, Cuicui, Gang Guo, Huilin Shi, Zheng Zhang, Futang Li, Yanwen Zhang, and Jinhua Han. 2024. "Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions" Electronics 13, no. 17: 3402. https://doi.org/10.3390/electronics13173402