A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection
Abstract
:1. Introduction
2. Device Description and Mechanism Analysis [1]
3. Simulation Analysis and Discussion
3.1. Overall Circuit Optimization Simulation Verification
3.2. Fixed Gate Source Voltage Reasonableness Verification
3.3. STDDSCR Parameter Optimization Simulation
3.4. Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Key Parameters | Numerical Value |
---|---|
NW dose/cm2 | 1.5 × 1013 |
PW dose/cm2 | 0.6 × 1012 |
L length/μm | 1.5 |
Resistance/kΩ | 30 |
Capacitance/pF | 30 |
Device Structure | Trigger Voltage/V | Hold Voltage/V | Leakage Current at 25 °C (nA) @1.5 V |
---|---|---|---|
DDSCR | 23.9 | 1.23 | 10 |
LVTDDSCR | 14.8 | 1.25 | <1 |
DCSCR | 1.82 | 1.3 | >1000 |
STDDSCR (Proposed) | 4.6 | 1.26 | <1 |
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Pan, J.; Li, F.; Wen, L.; Jin, J.; Huang, X.; Han, J. A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection. Electronics 2024, 13, 3458. https://doi.org/10.3390/electronics13173458
Pan J, Li F, Wen L, Jin J, Huang X, Han J. A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection. Electronics. 2024; 13(17):3458. https://doi.org/10.3390/electronics13173458
Chicago/Turabian StylePan, Jie, Fanyang Li, Liguo Wen, Jiazhen Jin, Xiaolong Huang, and Jiaxun Han. 2024. "A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection" Electronics 13, no. 17: 3458. https://doi.org/10.3390/electronics13173458