A CMOS Rail-to-Rail Class AB Second-Generation Voltage Conveyor and Its Application in a Relaxation Oscillator
Abstract
:1. Introduction
2. Class AB Rail-to-Rail VCII
2.1. The Class AB Current Buffer
2.2. The Rail-to-Rail Voltage Buffer
2.3. Simulation Results for VCII
3. Proposed Relaxation Oscillator with VCII−
3.1. Circuit Description and Equivalent Model
3.2. Estimation of the Oscillation Period
3.3. Analysis and Design of the Proposed Relaxation Oscillator
3.4. Simulation Results for the Relaxation Oscillator
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Transistor | W (μm) | gm/ID (S/A) |
---|---|---|
M1, M3, M5 | 2.88 | 17.5 |
M2, M4, M6 | 7.31 | 17.1 |
M7, M9 | 8.64 | 18.8 |
M8, M10 | 2.88 | 17 |
M11, M13 | 8.64 | 18.3 |
M12, M14 | 2.88 | 17.2 |
Transistor | W (μm) | gm/ID (S/A) |
---|---|---|
M15, M16 | 10.8 | 18 |
M17, M18 | 2.88 | 15.2 |
M19–M22 | 8.64 | 14.7 |
M23 | 1.44 | 14.8 |
M24 | 3.24 | 13 |
M25 | 4.32 | 9.1 |
Parameter | P | V(VDD − VSS) | T (°C) | ||||||
---|---|---|---|---|---|---|---|---|---|
FF | FS | SF | SS | ±0.99 V | ±0.81 V | −20 | 25 | 80 | |
rY [Ω] | 107.6 | 113.4 | 108.2 | 112.3 | 101.8 | 123.3 | 110.1 | 110.3 | 116.4 |
LY [µH] | 2.05 | 2.37 | 2.27 | 2.60 | 2.22 | 2.44 | 2.20 | 2.32 | 2.56 |
rX [kΩ] | 642.4 | 788.0 | 734.4 | 896.0 | 762.9 | 756.8 | 744.3 | 759.1 | 772.0 |
CX [fF] | 40.64 | 43.59 | 40.36 | 43.50 | 41.35 | 42.97 | 41.20 | 41.95 | 42.64 |
rZ [Ω] | 3.65 | 4.42 | 5.64 | 7.59 | 2.84 | 12.2 | 6.62 | 4.90 | 4.40 |
LZ [µH] | 1.16 | 1.60 | 1.89 | 2.89 | 1.09 | 3.52 | 2.26 | 1.74 | 1.54 |
β | 1.151 | 1.118 | 1.121 | 1.091 | 1.145 | 1.091 | 1.110 | 1.119 | 1.128 |
α | 0.9996 | 0.9995 | 0.9994 | 0.9992 | 0.9997 | 0.9998 | 0.9993 | 0.9995 | 0.9995 |
THDY-X [%] | 1.32 | 1.21 | 1.20 | 1.09 | 1.19 | 1.23 | 1.09 | 1.19 | 1.30 |
THDX-Z [%] | 0.39 | 0.29 | 0.28 | 0.32 | 0.37 | 1.45 | 0.28 | 0.29 | 0.45 |
Pdiss [µW] | 186.9 | 159.6 | 153.5 | 137.6 | 218.5 | 118.8 | 141.5 | 155.9 | 174 |
MC | rY [Ω] | LY [µH] | rX [kΩ] | Cx [fF] | rZ [Ω] | LZ [µH] | β | α | Pdiss [µW] | THDY-X [%] | THDX-Z [%] |
---|---|---|---|---|---|---|---|---|---|---|---|
Mean | 111.2 | 2.091 | 752.1 | 41.47 | 5.014 | 1.751 | 1.120 | 0.9994 | 157 | 1.204 | 0.2866 |
Sigma | 2.220 | 0.079 | 28.42 | 0.629 | 0.606 | 0.233 | 7.827 m | 52.35 μ | 6.99 | 28.07 m | 10.837 m |
[38] | [35] | [36] | [37] | Proposed | Proposed | |
---|---|---|---|---|---|---|
VCII type | positive | positive | positive | Positive | positive | negative |
Class | AB | AB | AB | AB | AB | AB |
α | 0.94 | 0.972 | 1 | 0.953 | 0.9994 | 0.9994 |
αBW [MHz] | 191.5 | 50 | 100 | 50 | 173.2 | 173.2 |
β | 1 | 0.996 | 0.987 | 0.993 | 1.044 | 1.119 |
βBW [MHz] | 86.6 | 165 | 169.7 | 11 | 311.1 | 298.3 |
rY [Ω] | 602 | 23 | 1.88 k | 973 | 97.48 | 110.4 |
rX [Ω] | 591 k | 522 k | 273.8 k | 120 k | 804.4 k | 759.7 k |
rZ [Ω] | 370 | 160 | 1.75 k | 217 | 4.86 | 4.86 |
Pdiss [µW] | 70 | 120 | 179 | 393 | 136.6 | 157 |
THDY-X [%] | - | 1.1 | 1 | 2.4 | 1 | 1.19 |
Ixpp @ 1 MHz | 0.5 mA | 1.22 mA | 10 mA | 2 mA | 200 μA | |
THDX-Z [%] | - | 2.4 | 1 | 3.9 | 0.29 | 0.29 |
Vxpp @ 1 MHz | 1.6 V | 1.78 V | 0.8 V | 1.5 V | 1.5 V | |
Number of transistors | 19 | 37 | 12 | 38 | 31 | 35 |
Technology | 0.18 μm | 0.15 μm | 0.18 μm | 0.18 μm | 0.18 μm | 0.18 μm |
Rail-to-rail | yes | yes | Yes | No | yes | yes |
Parameter | P | V(VDD − VSS) | T (°C) | ||||||
---|---|---|---|---|---|---|---|---|---|
FF | FS | SF | SS | ±0.99 V | ±0.81 V | −20 | 25 | 80 | |
f0 [MHz] | 1.025 | 1.046 | 1.051 | 1.049 | 0.978 | 1.067 | 1.056 | 1.056 | 1.027 |
Pdiss [μW] | 216.8 | 210.4 | 209.8 | 205.7 | 229.3 | 192.6 | 207.8 | 209.9 | 213.1 |
PN [dBc/Hz] | −85.70 | −86.41 | −85.79 | −86.76 | −86.58 | −86.03 | −85.97 | −86.05 | −86.53 |
Ref | [50] | [51] | [52] | [53] | [54] | [55] | Proposed |
---|---|---|---|---|---|---|---|
ABB | CCII | FTFN | ZC-CG-VDCC | CCCII | MO-CFDITA | CA | VCII |
Num. of ABB | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Passive elem. | 3R, 1C | 2R, 1C | 2R, 1C | 2R, 1C | 1C | - | 2R, 1C |
Max Op. Freq. | 50 MHz | 5 MHz | 4.385 MHz | 4.99 MHz | 50 MHz | 7 MHz | 10 MHz |
Number of transistors | 17 | 23 | 52 | 13 | 21 | 33 | 35 |
Area [μm2] | - | - | - | - | - | 50,000 | 1250 |
Power supply | ±0.75 V | ±1.65 V | ±1.0 V | ±1.0 V | ±1.25 V | ±0.75 V | ±0.9 V |
Power dissip. | 0.750 mW | 2.81 mW | 6.28 mW | 0.6 mW | 1.45 mW | 11 μW | 0.19 mW |
FOM [kHz/μW] | 66.7 | 1.78 | 0.70 | 8.32 | 34.5 | 636.36 | 52.6 |
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Djurić, R.; Popović-Božović, J. A CMOS Rail-to-Rail Class AB Second-Generation Voltage Conveyor and Its Application in a Relaxation Oscillator. Electronics 2024, 13, 3511. https://doi.org/10.3390/electronics13173511
Djurić R, Popović-Božović J. A CMOS Rail-to-Rail Class AB Second-Generation Voltage Conveyor and Its Application in a Relaxation Oscillator. Electronics. 2024; 13(17):3511. https://doi.org/10.3390/electronics13173511
Chicago/Turabian StyleDjurić, Radivoje, and Jelena Popović-Božović. 2024. "A CMOS Rail-to-Rail Class AB Second-Generation Voltage Conveyor and Its Application in a Relaxation Oscillator" Electronics 13, no. 17: 3511. https://doi.org/10.3390/electronics13173511