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Journal: Electronics, 2024
Volume: 13
Number: 4770

Article: Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances
Authors: by Xinyu Li, Feng He, Xiping Niu, Ling Sang, Yawei He, Kaixuan Xu, Yan Tian, Xintian Zhou, Yunpeng Jia and Rui Jin
Link: https://www.mdpi.com/2079-9292/13/23/4770

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