Order Article Reprints
Journal: Electronics, 2024
Volume: 13
Number: 729
Article:
A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits
Authors:
by
Haochen Wang, Kuangli Chen, Ning Yang, Jianggen Zhu, Enchuan Duan, Shuting Huang, Yishang Zhao, Bo Zhang and Qi Zhou
Link:
https://www.mdpi.com/2079-9292/13/4/729
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