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Journal: Electronics, 2025
Volume: 14
Number: 2947

Article: Modelling and Simulation of a New π-Gate AlGaN/GaN HEMT with High Voltage Withstand and High RF Performance
Authors: by Jun Yao, Xianyun Liu, Chenglong Lu, Di Yang and Wulong Yuan
Link: https://www.mdpi.com/2079-9292/14/15/2947

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