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Volume 14
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10.3390/electronics14040762
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Brief Report

Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si

by
Hyungju Noh
,
Changmin Chae
,
Yelim Jeon
,
Dongseok Oh
and
Sangwan Kim
*
Department of Electronic Engineering, Sogang University, Seoul 04107, Republic of Korea
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(4), 762; https://doi.org/10.3390/electronics14040762
Submission received: 30 December 2024 / Revised: 1 February 2025 / Accepted: 13 February 2025 / Published: 15 February 2025
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Abstract

This study investigates the impact of cross-bridge Kelvin resistor (CBKR) layout designs on specific contact resistivity (ρc) measurements between TiSi2 and n+ Si. The theoretical ρc is calculated as a function of silicon doping concentration (NSi) and Schottky barrier height (ϕb) to evaluate the measurement value. Various CBKR patterns are fabricated and measured with different contact hole areas (Ac) and aligned margins (δ) to evaluate measurement accuracy. The results show that CBKR with a narrow active width (W) can more accurately measure the ρc compared to the conventional layout mainly attributed to the current path confinement. In addition, if the contact hole length (L) is smaller than the transfer length (LT), the entire Ac contributes to the voltage drop of contact resistance (Rc), resulting in improved measurement accuracy. In contrast, if δ is increased, the measurement error decreases due to current dispersion near the recessed TiSi2 region, which is different from conventional CBKR layouts. Consequently, the measured ρc with an optimized layout shows a close value to the theoretical ρc.
Keywords: contact resistance; Ti silicidation; test pattern; cross-bridge Kelvin resistor (CBKR); layout; current crowding contact resistance; Ti silicidation; test pattern; cross-bridge Kelvin resistor (CBKR); layout; current crowding

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MDPI and ACS Style

Noh, H.; Chae, C.; Jeon, Y.; Oh, D.; Kim, S. Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si. Electronics 2025, 14, 762. https://doi.org/10.3390/electronics14040762

AMA Style

Noh H, Chae C, Jeon Y, Oh D, Kim S. Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si. Electronics. 2025; 14(4):762. https://doi.org/10.3390/electronics14040762

Chicago/Turabian Style

Noh, Hyungju, Changmin Chae, Yelim Jeon, Dongseok Oh, and Sangwan Kim. 2025. "Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si" Electronics 14, no. 4: 762. https://doi.org/10.3390/electronics14040762

APA Style

Noh, H., Chae, C., Jeon, Y., Oh, D., & Kim, S. (2025). Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si. Electronics, 14(4), 762. https://doi.org/10.3390/electronics14040762

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