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Volume 14
Issue 7
10.3390/electronics14071475
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Retraction of Electronics 2024, 13(12), 2347.
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Retraction

RETRACTED: Zhang et al. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347

by
Jingping Zhang
1,
Houcai Luo
1,
Huan Wu
1,
Bofeng Zheng
1,
Xianping Chen
1,2,
Guoqi Zhang
3,
Paddy French
3 and
Shaogang Wang
3,*
1
Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Chongqing 400044, China
2
Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China
3
Faculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(7), 1475; https://doi.org/10.3390/electronics14071475
Submission received: 25 March 2025 / Accepted: 25 March 2025 / Published: 7 April 2025
Versions Notes
The Electronics Editorial Office retracts the article “Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study” [1], cited above.
Following publication, the authors contacted the Editorial Office regarding errors identified in the simulation model and analysis presented in the article [1].
Adhering to our standard procedure, an investigation was conducted by the Editorial Board that confirmed that the simulation presented in this paper is incorrect due to the use of incorrect material parameters: Silicon Carbide (SiC) parameters were used, instead of Silicon (Si). Consequently, the conclusions drawn from this simulation are invalid and cannot be relied upon. As a result, the Editorial Office, Editorial Board, and the authors have concluded that this error undermines the validity and accuracy of the findings, and have decided to retract this article [1] as per MDPI’s retraction policy (https://www.mdpi.com/ethics#_bookmark30).
This retraction was approved by the Editor-in-Chief of the journal Electronics.
The authors agree to this retraction.

Reference

  1. Zhang, J.; Luo, H.; Wu, H.; Zheng, B.; Chen, X.; Zhang, G.; French, P.; Wang, S. RETRACTED: Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347. [Google Scholar] [CrossRef]
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content.

Share and Cite

MDPI and ACS Style

Zhang, J.; Luo, H.; Wu, H.; Zheng, B.; Chen, X.; Zhang, G.; French, P.; Wang, S. RETRACTED: Zhang et al. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347. Electronics 2025, 14, 1475. https://doi.org/10.3390/electronics14071475

AMA Style

Zhang J, Luo H, Wu H, Zheng B, Chen X, Zhang G, French P, Wang S. RETRACTED: Zhang et al. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347. Electronics. 2025; 14(7):1475. https://doi.org/10.3390/electronics14071475

Chicago/Turabian Style

Zhang, Jingping, Houcai Luo, Huan Wu, Bofeng Zheng, Xianping Chen, Guoqi Zhang, Paddy French, and Shaogang Wang. 2025. "RETRACTED: Zhang et al. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347" Electronics 14, no. 7: 1475. https://doi.org/10.3390/electronics14071475

APA Style

Zhang, J., Luo, H., Wu, H., Zheng, B., Chen, X., Zhang, G., French, P., & Wang, S. (2025). RETRACTED: Zhang et al. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347. Electronics, 14(7), 1475. https://doi.org/10.3390/electronics14071475

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