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Journal: Electronics, 2018
Volume: 7
Number: 227
227
Article: Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors
Authors: by Young Kwon Kim, Jin Sung Lee, Geon Kim, Taesik Park, HuiJung Kim, Young Pyo Cho, Young June Park and Myoung Jin Lee
Link: https://www.mdpi.com/2079-9292/7/10/227

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