Order Article Reprints

Kim YK, Lee JS, Kim G, Park T, Kim H, Cho YP, Park YJ, Lee MJ. Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors. Electronics. 2018; 7(10):227. https://doi.org/10.3390/electronics7100227

Kim, Young Kwon, Jin Sung Lee, Geon Kim, Taesik Park, HuiJung Kim, Young Pyo Cho, Young June Park, and Myoung Jin Lee. 2018. "Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors" Electronics 7, no. 10: 227. https://doi.org/10.3390/electronics7100227

Kim, Y. K., Lee, J. S., Kim, G., Park, T., Kim, H., Cho, Y. P., Park, Y. J., & Lee, M. J. (2018). Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors. Electronics, 7(10), 227. https://doi.org/10.3390/electronics7100227