Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Off-State Stress
3.2. High-Temperature Stress
3.3. Off-State Stress at High Temperature
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Degradation Rate [%] | Temperature of 75 °C | Off-state Stress Under 75 °C | Return to Room Temperature | 72 h to Recovery |
---|---|---|---|---|
Threshold voltage | 1.71 | 33.15 | 26.51 | 27.62 |
Transconductance peak | 11.52 | 32.20 | 13.61 | 11.26 |
Drain current (VG =1V /VD = 1 V) | 15.00 | 40.26 | 22.11 | 18.68 |
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Lin, J.; Liu, H.; Wang, S.; Liu, C.; Li, M.; Wu, L. Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs. Electronics 2019, 8, 1339. https://doi.org/10.3390/electronics8111339
Lin J, Liu H, Wang S, Liu C, Li M, Wu L. Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs. Electronics. 2019; 8(11):1339. https://doi.org/10.3390/electronics8111339
Chicago/Turabian StyleLin, Jinfu, Hongxia Liu, Shulong Wang, Chang Liu, Mengyu Li, and Lei Wu. 2019. "Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs" Electronics 8, no. 11: 1339. https://doi.org/10.3390/electronics8111339