Yang, Y.; Lv, Y.; Lin, Z.; Jiang, G.; Liu, Y.
Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics. Electronics 2020, 9, 1719.
https://doi.org/10.3390/electronics9101719
AMA Style
Yang Y, Lv Y, Lin Z, Jiang G, Liu Y.
Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics. Electronics. 2020; 9(10):1719.
https://doi.org/10.3390/electronics9101719
Chicago/Turabian Style
Yang, Yongxiong, Yuanjie Lv, Zhaojun Lin, Guangyuan Jiang, and Yang Liu.
2020. "Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics" Electronics 9, no. 10: 1719.
https://doi.org/10.3390/electronics9101719
APA Style
Yang, Y., Lv, Y., Lin, Z., Jiang, G., & Liu, Y.
(2020). Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics. Electronics, 9(10), 1719.
https://doi.org/10.3390/electronics9101719