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Journal: Electronics, 2020
Volume: 9
Number: 2039
Article:
Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
Authors:
by
Hyuk-Min Kwon, Dae-Hyun Kim and Tae-Woo Kim
Link:
https://www.mdpi.com/2079-9292/9/12/2039
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