Yoon, Y.J.; Lee, J.S.; Kim, D.-S.; Lee, S.H.; Kang, I.M.
One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure. Electronics 2020, 9, 2134.
https://doi.org/10.3390/electronics9122134
AMA Style
Yoon YJ, Lee JS, Kim D-S, Lee SH, Kang IM.
One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure. Electronics. 2020; 9(12):2134.
https://doi.org/10.3390/electronics9122134
Chicago/Turabian Style
Yoon, Young Jun, Jae Sang Lee, Dong-Seok Kim, Sang Ho Lee, and In Man Kang.
2020. "One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure" Electronics 9, no. 12: 2134.
https://doi.org/10.3390/electronics9122134
APA Style
Yoon, Y. J., Lee, J. S., Kim, D. -S., Lee, S. H., & Kang, I. M.
(2020). One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure. Electronics, 9(12), 2134.
https://doi.org/10.3390/electronics9122134