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Journal: Electronics, 2020
Volume: 9
Number: 2196

Article: Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness
Authors: by Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang, Dong-Ho Lee and Hyuck-In Kwon
Link: https://www.mdpi.com/2079-9292/9/12/2196

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