Solid-State Color Centers for Single-Photon Generation
Abstract
:1. Introduction
2. Single-Photon-Emitting Color Centers
3. Material Platforms
3.1. Diamond
ZPL (nm) | T (K) | Excited State Lifetime (ns) | FWHM at Operational Temperature (nm) | Single Emitter Saturation Count Rate (kcps) | Spin Manipulation | Integration of SPs with Photonic Structures | References | ||
---|---|---|---|---|---|---|---|---|---|
Diamond | NV | 575, 638 | RT | 12–22 | Broad emission | 1 k | Yes | Yes | [19,30,31,32,33,34,61,65] |
SiV | 738 | RT | 1.0–2.4 | 0.7–5 | ~4.8k | Yes | Yes | [35,54,55,62,63,64,66] | |
GeV | 602 | RT | 1.4–5.5 | 5 | 170–1.2 k | Yes | Yes | [35,37,52,55] | |
SnV | 620 | RT | 6 | 6 | 530 | Yes | Yes | [35,38,67,68] | |
PbV | 520, 552 | RT | >3 | 7 | 1.04 k | [35,39] | |||
MgV | 558 | RT | 2.4 | 3 | 0.44–1.46 k | [23] | |||
ST1 | 557 | RT | 9 | ~5 | Yes | [45] | |||
He | 536, 560 | RT | 29, 106 | <2 (ensemble) | [46] | ||||
Xe | 794, 812 | RT | ~0.77 | Broad emission | [47] |
3.2. Silicon Carbide
3.3. Silicon
ZPL (nm) | T (K) | Excited State Lifetime (ns) | FWHM at Operational Temperature (nm) | Single Emitter Saturation Count Rate (kcps) | Spin Manipulation | Integration of SPs with Photonic Structures | References | ||
---|---|---|---|---|---|---|---|---|---|
Silicon | G | 1279 | 4–110 K | 35.8 | 0.28 | 8 | Yes | Yes | [103,106,110,131,142] |
W | 1218 | 4–60 K | 3–34.5 | 0.1 | 2–6 | Yes | [111,117,140,141] | ||
T | 1326 | <5 K | 940 | 0.04 | 2 | Yes | [115,116] |
3.4. Nitrides
ZPL (nm) | T (K) | Excited State Lifetime (ns) | FWHM at Operational Temperature (nm) | Single Emitter Saturation Count Rate (kcps) | Spin Manipulation | Integration of SPs with Photonic Structures | References | ||
---|---|---|---|---|---|---|---|---|---|
(Mg)-doped and undoped GaN films | Intrinsic defects | 600–700 | RT | ~1–3 | ~5 | 100–150 | Yes | [152,153,154,155] | |
Intrinsic defects | 1100–1300 | RT | 0.7 | 3–50 | 500 | Yes | [157,158] | ||
AlN | NAlVN, VAlVN | 550–1000 | RT | ~2 | <12 | 500 | Yes | [161,162,168] | |
hBN | VNNB | 623 | RT | ~3 | >4 k | Yes (without attribution to a specific defect complex) | [171,172,173,179,180,181] | ||
VBCN | 630 | RT | ~2–6 | ~5–35 | >4 k | [171,176,179,180,181,191,192,193,194,195,196,197] | |||
VB− | 850 | RT | 1.2 | Broad emission | >4 k | Yes | [169,175,177,178,179,180,181] | ||
SiN | Intrinsic defects | 567–670 | RT | 3.8 | Broad emission | 500 | Yes | [170] |
4. Perspectives
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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ZPL (nm) | T (K) | Excited State Lifetime (ns) | FWHM at Operational Temperature (nm) | Single Emitter Saturation Count Rate (kcps) | Spin Manipulation | Integration of SPs with Photonic Structures | References | ||
---|---|---|---|---|---|---|---|---|---|
Silicon Carbide | VSi | 858.2, 862, 917 | RT | ~5 | <100 | ~10 | Yes | Yes | [74,75,76,77,78,79,80,96] |
CSiVC | 650–675 | RT | 1.2 | >100 | 2 k | [74,84,86] | |||
NV | 1150–1350 | RT | 2 | 1–3 | 17.4 | Yes | [93,94] | ||
V4+ | 1279–1387 | RT | >70 | Yes | [95] |
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Andrini, G.; Amanti, F.; Armani, F.; Bellani, V.; Bonaiuto, V.; Cammarata, S.; Campostrini, M.; Dao, T.H.; De Matteis, F.; Demontis, V.; et al. Solid-State Color Centers for Single-Photon Generation. Photonics 2024, 11, 188. https://doi.org/10.3390/photonics11020188
Andrini G, Amanti F, Armani F, Bellani V, Bonaiuto V, Cammarata S, Campostrini M, Dao TH, De Matteis F, Demontis V, et al. Solid-State Color Centers for Single-Photon Generation. Photonics. 2024; 11(2):188. https://doi.org/10.3390/photonics11020188
Chicago/Turabian StyleAndrini, Greta, Francesco Amanti, Fabrizio Armani, Vittorio Bellani, Vincenzo Bonaiuto, Simone Cammarata, Matteo Campostrini, Thu Ha Dao, Fabio De Matteis, Valeria Demontis, and et al. 2024. "Solid-State Color Centers for Single-Photon Generation" Photonics 11, no. 2: 188. https://doi.org/10.3390/photonics11020188