Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics
Abstract
:1. Introduction
1.1. Structures and Properties of Low-Dimensional Nanomaterials
1.2. Influences of Low-Dimensional Semiconductor Morphologies on Optoelectronics
2. Structure, Growth, and Preparation of Pyramidal Low-Dimensional Semiconductors
2.1. Pyramidal Semiconductor Quantum Dots with Different Components
2.1.1. Structure and Growth of Pyramidal SiGe/Si Quantum Dots
2.1.2. Structure and Growth of Pyramidal III–V Quantum Dots
2.1.3. Structure and Growth of Pyramidal III-Nitride Quantum Dots
2.1.4. Structure and Growth of Pyramidal II–VI Quantum Dots
2.1.5. Structure and Growth of Pyramidal IV–VI Quantum Dots
2.1.6. Preparation Methodology of Pyramidal Semiconductor Quantum Dots
2.2. Pyramidal Semiconductor Nanorods (Nanowires) with Different Components
2.2.1. Structure and Growth of Pyramidal II–VI Nanorods (Nanowires)
2.2.2. Other Pyramidal Semiconductor Nanorods (Nanowires)
2.2.3. Preparation Methodology of Pyramidal Semiconductor Nanorods (Nanowires)
3. Energy Band Structures and Electronic Properties of Pyramidal Low-Dimensional Semiconductors
3.1. Definition of the k·p Perturbation Method
3.2. III–V Pyramidal Semiconductor Quantum Dots
3.3. III-Nitride Pyramidal Semiconductor Quantum Dots
3.4. II–VI Pyramidal Semiconductor Quantum Dots
3.5. Summary
4. Fundamental Optical Processes Based on Pyramidal Low-Dimensional Semiconductors
5. Applications of Pyramidal Low-Dimensional Semiconductors in Optoelectronics
5.1. Photocatalysts Based on Pyramidal Low-Dimensional Semiconductors
5.2. Photodetectors Based on Pyramidal Low-Dimensional Semiconductors
5.3. Solar Cells Based on Pyramidal Low-Dimensional Semiconductors
5.4. Luminescent Devices Based on Pyramidal Low-Dimensional Semiconductors
5.5. Quantum Information Applications Based on Pyramidal Low-Dimensional Semiconductors
6. Summary and Perspectives
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Shape | Material | Size | Maximum PLQY | Reference |
---|---|---|---|---|
Sphere | Si | 3–4 nm | 85% | [62] |
CdTe/CdS/ZnS | 10 nm | 73% | [63] | |
CdSe/CdS/ZnS | 3.6 nm | 37.3% | [64] | |
PbTe | 2.6–8.3 nm | 52% | [65] | |
PbSe/CdSe | 6.2 nm | 70% | [66] | |
InP/ZnS | 10 nm | 66.5% | [67] | |
InAs/ZnSe | 2.8 nm | 20% | [68] | |
Plate | CsPbBr3 | 27–33 nm | 65% | [69] |
CH3NH3PbBr3 | 4–10 nm | 80% | [70] | |
Cu-doped CdSe | 34–40 nm | 95% | [71] | |
CdSe/CdS@CdS | 12.7–16.1 nm | 90% | [72] | |
Pyramid | CdSe/CdS | 5.5–6 nm | 94% | [73] |
AgInSe2 | 7–12 nm | 21% | [74] | |
CdSe | 4.9–5.7 nm | 41% | [75] | |
CuInS2/ZnS | 4.8–7.2 nm | 76% | [76] |
Preparation Method | Material | Reference |
---|---|---|
MOCVD | AlGaAs/GaAs | [103] |
InGaAs/AlGaAs | [104] | |
InGaAs/GaAs | [105] | |
CdS/ZnS | [115] | |
InGaAsN | [112] | |
InAs/InP | [108] | |
In0.25Ga0.75As/GaAs/GaP | [106] | |
(InGa)(AsSb)/GaAs/GaP | [107] | |
MBE | SiGe/Si | [94] |
InAs/GaAs | [100] | |
PbS | [121] | |
PbSe | [120] | |
CdSe/ZnSe | [116] | |
GaN | [111] | |
GaAs/AlGaAs | [132] |
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Jiang, A.; Xing, S.; Lin, H.; Chen, Q.; Li, M. Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics. Photonics 2024, 11, 370. https://doi.org/10.3390/photonics11040370
Jiang A, Xing S, Lin H, Chen Q, Li M. Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics. Photonics. 2024; 11(4):370. https://doi.org/10.3390/photonics11040370
Chicago/Turabian StyleJiang, Ao, Shibo Xing, Haowei Lin, Qing Chen, and Mingxuan Li. 2024. "Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics" Photonics 11, no. 4: 370. https://doi.org/10.3390/photonics11040370