Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications
Abstract
:1. Introduction
2. Results and Discussion
2.1. Scanning Electron Microscope and X-ray Diffraction Pattern
2.2. Dielectric Characterization
2.3. The Current–Voltage (I–V) Characteristic
3. Conclusions
4. Materials and Methods
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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T (k) | ɸb eV | Rsh Ω | Rs Ω | n |
---|---|---|---|---|
300 | 0.77 | 1.09 × 105 | 3.38 × 103 | 3.14 |
325 | 0.83 | 1.01 × 105 | 2.44 × 103 | 3.04 |
350 | 0.89 | 7.19 × 104 | 2.01 × 103 | 2.82 |
375 | 0.96 | 6.43 × 104 | 1.80 × 103 | 2.8 |
400 | 1.03 | 1.73 × 104 | 1.31 × 103 | 2.74 |
425 | 1.1 | 1.54 × 104 | 1.40 × 103 | 2.63 |
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Ashery, A.; Gaballah, A.E.H.; Turky, G.M.; Basyooni-Murat Kabatas, M.A. Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications. Gels 2024, 10, 537. https://doi.org/10.3390/gels10080537
Ashery A, Gaballah AEH, Turky GM, Basyooni-Murat Kabatas MA. Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications. Gels. 2024; 10(8):537. https://doi.org/10.3390/gels10080537
Chicago/Turabian StyleAshery, Adel, Ahmed E. H. Gaballah, Gamal M. Turky, and Mohamed A. Basyooni-Murat Kabatas. 2024. "Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications" Gels 10, no. 8: 537. https://doi.org/10.3390/gels10080537