Zheng, W.; Zhang, Y.; Chen, Z.; Gan, Q.; Xiao, X.; Gao, Y.; Jiang, J.; Chen, C.
An Efficient Electrostatic Discharge Analytical Model for a Local Bottom-Gate Carbon Nanotube Field-Effect Transistor. Electron. Mater. 2025, 6, 17.
https://doi.org/10.3390/electronicmat6040017
AMA Style
Zheng W, Zhang Y, Chen Z, Gan Q, Xiao X, Gao Y, Jiang J, Chen C.
An Efficient Electrostatic Discharge Analytical Model for a Local Bottom-Gate Carbon Nanotube Field-Effect Transistor. Electronic Materials. 2025; 6(4):17.
https://doi.org/10.3390/electronicmat6040017
Chicago/Turabian Style
Zheng, Weiyi, Yuyan Zhang, Zhifeng Chen, Qiaoying Gan, Xuefang Xiao, Ying Gao, Jianhua Jiang, and Chengying Chen.
2025. "An Efficient Electrostatic Discharge Analytical Model for a Local Bottom-Gate Carbon Nanotube Field-Effect Transistor" Electronic Materials 6, no. 4: 17.
https://doi.org/10.3390/electronicmat6040017
APA Style
Zheng, W., Zhang, Y., Chen, Z., Gan, Q., Xiao, X., Gao, Y., Jiang, J., & Chen, C.
(2025). An Efficient Electrostatic Discharge Analytical Model for a Local Bottom-Gate Carbon Nanotube Field-Effect Transistor. Electronic Materials, 6(4), 17.
https://doi.org/10.3390/electronicmat6040017
