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Volume 14
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10.3390/engproc2022014017
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Proceeding Paper

Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications †

by
Ali Houadef
1,* and
Boualem Djezzar
2
1
Signals and Systems Laboratory (LSS), Institute of Electrical and Electronic Engineering (IGEE), M’Hamed Bouguerra University of Boumerdés (UMBB), Boumerdés 35000, Algeria
2
Reliability of Semiconductor Components Team (FCS), Microelectronics and Nanotechnology Division (DMN), Centre de Développement des Technologies Avancées (CDTA), Algiers 16000, Algeria
*
Author to whom correspondence should be addressed.
†
Presented at the 1st International Conference on Computational Engineering and Intelligent Systems, Online, 10–12 December 2021.
Eng. Proc. 2022, 14(1), 17; https://doi.org/10.3390/engproc2022014017
Published: 10 February 2022
(This article belongs to the Proceedings of The 1st International Conference on Computational Engineering and Intelligent Systems)
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Abstract

In this paper we investigate the performance of an integrated n-type laterally-diffused metal oxide semiconductor (nLDMOS) transistor, using 2D TCAD simulations. This work is based on the 1 µm CMOS technology node at CDTAs clean room. The nLDMOS process uses the necessary steps extracted from logic-integrated circuits fabrication flow, which yields to local oxidation of silicon (LOCOS), single reduced surface field (RESURF)-based nLDMOS, without needing any additional masks or steps. The resulting device has a 22 V breakdown voltage (BV) and 272 mm2 mΩ specific on-state resistance (RON). The analysis determined that the proposed device could be implemented in RF power amplifiers for wireless communications or automotive circuits as primary domains, provided experimental calibrations.
Keywords: LDMOS; TCAD; CMOS LDMOS; TCAD; CMOS

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MDPI and ACS Style

Houadef, A.; Djezzar, B. Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications. Eng. Proc. 2022, 14, 17. https://doi.org/10.3390/engproc2022014017

AMA Style

Houadef A, Djezzar B. Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications. Engineering Proceedings. 2022; 14(1):17. https://doi.org/10.3390/engproc2022014017

Chicago/Turabian Style

Houadef, Ali, and Boualem Djezzar. 2022. "Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications" Engineering Proceedings 14, no. 1: 17. https://doi.org/10.3390/engproc2022014017

APA Style

Houadef, A., & Djezzar, B. (2022). Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications. Engineering Proceedings, 14(1), 17. https://doi.org/10.3390/engproc2022014017

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