Epitaxial SrTiO
3 (STO) thin films were grown on (001)-oriented LaAlO
3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (
PO
2) was varied at 1.5 × 10
−5, 1.5 × 10
−4, and 1.5 × 10
−3 Torr during the growth. The effects of
PO
2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that
PO
2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (
a- and
b-axes) and a tensile strain along the growth direction (
c-axis). The crystalline quality of STO films was slightly improved at higher
PO
2. Oxygen vacancy was favorably created in the STO lattice grown at low
PO
2 due to a lack of oxygen during growth and became suppressed at high
PO
2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti
3+ instead of Ti
4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high
PO
2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.
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