Recent Research on Electronic Materials and Packaging Technology

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Hybrid and Composite Crystalline Materials".

Deadline for manuscript submissions: 20 December 2025 | Viewed by 143

Special Issue Editors

School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: electronics packaging; soldering; sintering

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Guest Editor
School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: electronics packaging; additive manufacturing; microstructural control

E-Mail Website
Guest Editor
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: dynamic information storage and encryption; light response regulation; molecular self-assembly

Special Issue Information

Dear Colleagues,

The field of electronics continues to evolve at an exponential pace, driven by advancements in miniaturization, energy efficiency, and multifunctional device integration. Electronic materials and packaging technologies must balance conflicting requirements, such as high thermal conductivity with electrical insulation, mechanical flexibility with structural integrity, and environmental sustainability with cost-effectiveness. Recent progress in crystalline materials—including semiconductors, oxides, metals, ceramics, plastics, composites and 2D nanomaterials—has unlocked new possibilities. However, challenges remain, such as interface regulation mechanisms in composites, interfacial thermal resistance in layered structures, signal attenuation in high-frequency systems, and the environmental impact of lead-based solders.

This Special Issue seeks to address these gaps through interdisciplinary research. We are interested in research that explores the design, structure, and application of these materials. Potential topics include material selection and properties, design and structure optimization, advanced manufacturing techniques, applications in electronics, and environmental and sustainability considerations. We welcome both research articles and review papers that contribute to the development of electronic information materials and packaging materials.

Dr. Siliang He
Dr. Jinguo Ge
Dr. Jing Liu
Guest Editors

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Keywords

  • electronics packaging
  • advanced manufacturing techniques
  • crystalline materials
  • microstructure characterization
  • semiconductor crystals
  • thermal interface materials

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Published Papers (1 paper)

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Research

15 pages, 6277 KiB  
Article
High-Performance Ferroelectric Capacitors Based on Pt/BaTiO3/SrRuO3/SrTiO3 Heterostructures for Nonvolatile Memory Applications
by Zengyuan Fang, Yiming Peng, Haiou Li, Xingpeng Liu and Jianghui Zhai
Crystals 2025, 15(4), 337; https://doi.org/10.3390/cryst15040337 - 2 Apr 2025
Viewed by 23
Abstract
BaTiO3 (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation [...] Read more.
BaTiO3 (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation for multi-value storage. In this study, high-quality BaTiO3 ferroelectric thin films have been successfully prepared on STO substrates by pulsed laser deposition (PLD), and Pt/BaTiO3/SrRuO3/SrTiO3 ferroelectric heterojunctions were finally prepared by a combination of UV lithography and magnetron sputtering. Characterization and performance tests were carried out by AFM, XRD, and a semiconductor analyzer. The results demonstrate that the ferroelectric heterojunction prepared in this study exhibits excellent ferroelectric properties. Furthermore, the device demonstrates fatigue-free operation after 107 bipolar switching cycle tests, and the polarization value exhibits no significant decrease in the holding characteristic test at 104 s, thereby further substantiating its exceptional reliability and durability. These findings underscore the considerable promise of BTO ferroelectric memories for nonvolatile storage applications and lay the foundation for the development in the fields of both in-memory computing systems and neuromorphic computing. Full article
(This article belongs to the Special Issue Recent Research on Electronic Materials and Packaging Technology)
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