Advances in Semiconductor Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 February 2024) | Viewed by 1409

Special Issue Editors


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Guest Editor
Mathematics Department, Faculty of Science, South Valley University, Qena 83523, Egypt
Interests: thermoelasticity; continuum mechanics; diffusion; dissipation; voids; magnetic field; heat transfer; chemical reaction; relaxation times; peristaltic flow; porosity; absorption

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Co-Guest Editor
Mathematics Department, Faculty of Science, Sohag University, Sohag, Egypt
Interests: materials dharacterization and analysis

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Co-Guest Editor
Department of Mathematics and Statistics, College of Science, Taif University, Taif, Saudi Arabia
Interests: nanofluid; magneto-thermoelastic; photothermal semiconductor medium

Special Issue Information

Dear Colleagues,

This Special Issue on “Advances in Semiconductor Materials” deals with problems in semiconductors and their various external parameters, such as magnetized, rotational, gravitational, photothermal, and relaxation time effects. The phenomena include wave propagation, reflection, and transmission. Also, mathematical modelling related to advances in semiconductor materials will also be considered.

Thermoelastic deformation (TED) is a change in the internal structure of a material caused by photoexcitation and the heat effect that follows. Mechanical (elastic) vibrations are caused by the thermal excitation and transport of electrons, and it is important to consider how thermal conductivity changes as a result. Consequently, in addition to the photothermal theory, the theory of thermoelasticity is used to study semiconductors. The photothermal technique was employed in the photoacoustic spectroscopy (PAS) of semiconductor materials to comprehend the wave propagation characteristics of semiconductor materials.

This Special Issue aims to attract original contributions on topics related to both experiments and theory regarding semiconductor materials and characteristics.

Prof. Dr. S. M. Abo-Dahab
Prof. Dr. Abdelmooty Mohamed Abd-Alla
Prof. Dr. Fatimah S. Bayones
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors
  • thermoelasticity
  • magnetic field
  • photothermal
  • thermoelasticity
  • 2D materials
  • layered transition metal chalcogenides
  • graphene
  • wide bandgap semiconductors
  • spectro scopic properties

Published Papers (1 paper)

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Research

13 pages, 4815 KiB  
Article
Flexible Ultraviolet Sensor Based on Zinc Oxide Nanoparticle Powder
by Nicol Alejandra Munguía-Fernández, Jhonathan Rafael Castillo-Saenz, Oscar Manuel Perez-Landeros, Roumen Nedev, David Mateos, Judith Paz, Mariel Suárez, Mario Alberto Curiel-Alvarez, Nicola Nedev and Abraham Arias
Crystals 2023, 13(12), 1672; https://doi.org/10.3390/cryst13121672 - 11 Dec 2023
Viewed by 1062
Abstract
Zinc oxide nanopowder was synthesized by the coprecipitation method. FT-IR and EDS analyses were performed to qualitatively determine the composition of the nanopowder. FE-SEM images revealed the morphology of the nanopowder formed by clusters of nanoparticles. An XRD analysis confirmed the wurtzite structure [...] Read more.
Zinc oxide nanopowder was synthesized by the coprecipitation method. FT-IR and EDS analyses were performed to qualitatively determine the composition of the nanopowder. FE-SEM images revealed the morphology of the nanopowder formed by clusters of nanoparticles. An XRD analysis confirmed the wurtzite structure with a crystallite size of ~21.2 nm. UV–Vis measurements were performed to determine the ZnO bandgap (~3.05 eV) using the Tauc plot method in the absorbance spectra. The ZnO nanopowder and two comb-like metal contacts were confined and compacted between two polymeric layers by a low-temperature thermal lamination method, resulting in a flexible Polymer/ZnO/Metal/ZnO/Polymer structure. Part of each comb-like metal was kept uncovered by a polymeric layer in order to be used for electrical characterization. I-V measurements of the flexible structure were performed in the dark and under UV illumination, showing the capacity to detect UV radiation and its potential application as a visible-blind UV sensor. A facile and low-cost flexible optoelectronic device is presented, avoiding using high-vacuum or high-temperature technology. This new and novel approach to developing optoelectronic devices proposes using powder materials as semiconducting active regions instead of thin films; this could eliminate the cracking and delamination problems of flexible devices based on thin film technology. Full article
(This article belongs to the Special Issue Advances in Semiconductor Materials)
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