Advances in Wide Bandgap Semiconductor Materials
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".
Deadline for manuscript submissions: 20 March 2026 | Viewed by 30
Special Issue Editors
Interests: atomic layer deposition (ALD) mechanism of semiconducting group III-nitrides films
Interests: atomic layer deposition (ALD) mechanism of semiconducting group III-nitrides films; applications of ALD nitrides
Interests: GaN MOCVD epitaxy; InGaN LEDs; GaN HEMTs; micro-disk lasers; micro-LED displays
Special Issues, Collections and Topics in MDPI journals
Interests: transmission electron microscopy (S)TEM methods; semiconductors (SiC, III-N, others); OAD films (oxides, metals); ceramics thermo-chemical treatments
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wide-bandgap semiconductor materials have emerged as revolutionary platforms for next-generation optoelectronic and power electronic devices over the past two decades. Materials such as gallium nitride (GaN), silicon carbide (SiC), and diamond have demonstrated exceptional capabilities in high-power, high-frequency, and high-temperature applications. While GaN-based devices already dominate the LED lighting market and are penetrating RF communication systems, challenges remain in achieving ideal device performance. The “green gap” in LED efficiency, limited thermal conductivity of heterostructures, and reliability issues under extreme operating conditions continue to motivate fundamental research. Furthermore, the development of ultra-wide-bandgap materials (bandgap > 4 eV) like aluminum nitride (AlN) and gallium oxide (Ga₂O₃) opens new frontiers for deep-UV optoelectronics and ultra-high voltage power devices.
This Special Issue of Crystals serves to provide a platform for researchers to report their studies on wide-bandgap semiconductor materials, including fundamental material properties, advanced growth techniques, novel device architectures, fabrication procedures, optical and electronic characteristics, and their applications in high-efficiency LEDs, UV photodetectors, high-power transistors, and next-generation power converters, etc.
Potential topics include, but are not limited to, the following:
- Epitaxial growth of wide/ultra-wide bandgap semiconductors;
- Defect engineering and interface control;
- Strain modulation techniques for heterostructure design;
- Thermal management strategies;
- High-efficiency optoelectronic devices;
- Power electronic devices;
- Advanced characterization methods for material analysis;
- Study of Reliability and mechanisms;
- Innovative substrate technologies to reduce defects and improve crystal quality;
- Hybrid material integration.
Dr. Sanjie Liu
Prof. Dr. Xinhe Zheng
Dr. Yangfeng Li
Prof. Dr. Francisco M. Morales
Guest Editors
Manuscript Submission Information
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Keywords
- wide-bandgap semiconductor
- crystal growth
- MBE
- CVD/MOCVD
- HVPE
- optoelectronics
- power electronics
- LED
- UV
- nanostructures
- doping
- defects
- electron mobility
- thermal conductivity
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