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Nitride Semiconductor Devices and Applications
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Nitride Semiconductor Devices and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (31 May 2024) | Viewed by 6738

Special Issue Editors

Prof. Dr. Weijun Luo

E-Mail Website
Guest Editor
1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
2. University of Chinese Academy of Sciences, Beijing 100029, China
Interests: GaN-based RF/power devices and circuits (PA, LNA, switch, DC/DC converter and inverter, etc.)
Dr. Yangfeng Li

E-Mail Website
Guest Editor
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Interests: GaN MOCVD epitaxy; InGaN LEDs; GaN HEMTs; micro-disk lasers; micro-LED displays
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues, 

This Special Issue on “Nitride Semiconductor Devices and Applications” focuses on nitride semiconductor growth and characterization, nitride semiconductor devices, and their application circuits. The main goal of Special Issue is to highlight new scientific knowledge relevant, but not limited, to:

  • Nitride semiconductor epitaxy growth and characterization;
  • Nitride semiconductor devices: RF/power/LED/LD, etc.;
  • RF application circuits: PA, LNA, Switch, etc.;
  • Power IC: DC/DC converter, inverter, driver, etc.

Prof. Dr. Weijun Luo
Dr. Yangfeng Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • GaN MOCVD epitaxy
  • LEDs
  • GaN HEMTs
  • lasers
  • LED
  • power amplifier
  • switch
  • low-noise amplifier
  • driver
  • DC/DC converter and inverter

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Published Papers (4 papers)

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Research

16 pages, 2241 KiB  
Article
A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit
by Simone Palazzo, Annunziata Sanseverino, Giovanni Canale Parola, Emanuele Martano, Francesco Velardi and Giovanni Busatto
Electronics 2024, 13(11), 2189; https://doi.org/10.3390/electronics13112189 - 4 Jun 2024
Viewed by 517
Abstract
Temperature is a critical parameter for the GaN HEMT as it sharply impacts the electrical characteristics of the device more than for SiC or Si MOSFETs. Either when designing a power converter or testing a device for reliability and robustness characterizations, it is [...] Read more.
Temperature is a critical parameter for the GaN HEMT as it sharply impacts the electrical characteristics of the device more than for SiC or Si MOSFETs. Either when designing a power converter or testing a device for reliability and robustness characterizations, it is essential to estimate the junction temperature of the device. For this aim, manufacturers provide compact models to simulate the device in SPICE-based simulators. These models provide the junction temperature, which is considered uniform along the channel. We demonstrate through two-dimensional numerical simulations that this approach is not suitable when the device undergoes high electrothermal stress, such as during short circuit (SC), when the temperature distribution along the channel is strongly not uniform. Based on numerical simulations and experimental measurements on a 650 V/4 A GaN HEMT, we derived a thermal network suitable for SPICE simulations to correctly compute the junction temperature and the SC current, even if not providing information about the possible failure of the device due to the formation of a local hot spot. For this reason, we used a second thermal network to estimate the maximum temperature reached inside the device, whose results are in good agreement with the experimental observed failures. Full article
(This article belongs to the Special Issue Nitride Semiconductor Devices and Applications)
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11 pages, 2566 KiB  
Communication
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process
by Won-Ho Jang, Jun-Hyeok Yim, Hyungtak Kim and Ho-Young Cha
Electronics 2023, 12(7), 1667; https://doi.org/10.3390/electronics12071667 - 31 Mar 2023
Cited by 3 | Viewed by 1642
Abstract
We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate [...] Read more.
We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. The AlN film deposited by PEALD exhibited a crystalline structure, not an amorphous one. The enhanced polarization effect of introducing the PEALD AlN film on a thin AlGaN barrier was confirmed through electrical analysis. To fabricate the E-mode AlGaN/GaN MIS-HFET, the PEALD AlN film was deposited on a 4.5 nm AlGaN barrier layer and then a damage-free wet etching process was used to open the gate region. The MIS-gate structure was formed by depositing a 15 nm plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide (SiO2) film. The fabricated thin-AlGaN/GaN MIS-HFET demonstrated successful E-mode operation, with a threshold voltage of 0.45 V, an on/off ratio of approximately 109, a specific on-resistance of 7.1 mΩ·cm2, and an off-state breakdown voltage exceeding 1100 V. Full article
(This article belongs to the Special Issue Nitride Semiconductor Devices and Applications)
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11 pages, 9929 KiB  
Article
Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs
by Qizheng Ji, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu and Shanghe Liu
Electronics 2023, 12(6), 1473; https://doi.org/10.3390/electronics12061473 - 20 Mar 2023
Cited by 1 | Viewed by 1578
Abstract
AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and [...] Read more.
AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is related to the polarization Coulomb field scattering, and the proton irradiation influences the intensity of the polarization Coulomb field scattering by changing the polarization/strain distribution in the barrier layer. The different gate–drain distances correspond to different variation trends of scattering intensity. The effect of 1 MeV protons on the barrier layer is smaller compared with 0.6 MeV and 0.4 MeV protons, so the mobility variation is smaller. Full article
(This article belongs to the Special Issue Nitride Semiconductor Devices and Applications)
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6 pages, 9641 KiB  
Communication
p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
by Xiaoyu Ding, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang and Xinping Zhang
Electronics 2023, 12(6), 1424; https://doi.org/10.3390/electronics12061424 - 16 Mar 2023
Cited by 1 | Viewed by 2122
Abstract
A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion [...] Read more.
A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion implantation passivation reduces H ion diffusion in p-GaN, allowing it to withstand temperatures above 350 °C. Through experiments and analyses, the H ion implantation energy and dosage required to passivate p-GaN, by generating Mg-H neutral complexes, were determined to be 20 keV and 1.5 × 1013 cm−2, respectively. After conducting annealing procedures at various temperatures, we discovered that 400 °C was the ideal temperature to effectively obtain a normally off p-GaN HEMT. A threshold voltage of 0.8 V was achievable. The p-GaN HEMT also had a breakdown voltage of 642 V at a gate voltage of 0 V, maximum transconductance of 57.7 mS/mm, an on/off current ratio of 108, an on-resistance of 8.4 mm, and a maximum drain current of 240.0 mA/mm at a gate voltage of 6 V after being annealed at 400 °C. Full article
(This article belongs to the Special Issue Nitride Semiconductor Devices and Applications)
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