Semimetal, Semiconductor or Oxide based Electronics, Optoelectronics and Integrated Devices and Sensors

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (15 December 2020) | Viewed by 3761

Special Issue Editors


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Guest Editor
Nanoelectronics Materials and Devices Group, Tyndall National Institute, University College Cork, T12 YN60 Cork, Ireland
Interests: low-dimensional heterogeneous integration; nanofabrication; nanoscale logic and memory devices for beyond CMOS; spintronics; 2D materials

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Guest Editor
Tyndall National Institute, University College Cork, Cork T12 YN60, Ireland
Interests: first-principle simulations; emerging nanoelectronic device concepts for beyond CMOS; 1D and 2D nanostructures and nanosensors; hetero-interfaces, surfaces, dopants and defects

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Guest Editor
Georgia Institute of Technology, 771 Ferst Dr, NW, Atlanta, GA-30332, USA
Interests: synthesis and characterization of nanomaterials; nanocomposites; thin Films; photovoltaic devices and solar cells; energy storage devices such as batteries and supercapacitors; sensors; photocatalysis

Special Issue Information

Dear Colleagues,

The Internet of Things (IoT) is a new paradigm that has changed the traditional way of living into a high-tech life style by taking advantage of quantum and nanotechnology in terms of sensing, data storage, and data processing speed, which were previously inconceivable. To realise the full vision of IoT, research studies have been carried out to address the critical challenges of various aspects of ‘individual’ and ‘integrated’ devices. Features such as reduced power consumption and improved performance of individual devices, as well as more compact integrated systems are at the forefront of the research agenda. The purpose of this Special Issue is to provide an update of the developments and trends towards the realisation of smaller, smarter, and less power hungry devices spanning from electronics and photonics to various sensing and data storage architectures. We seek research and review articles about different aspects of material science and device concepts, including atomic-scale simulation, TCAD modelling, design, growth, synthesis, functionalisation, nanofabrication, and material/device structural, electronic, optical, chemical, mechanical and magnetic characterization, as well as quantum effects, surface termination, impurities, defects and grain boundary studies. Papers on a wide range of material systems from semimetals and semiconductors to oxides, organic and inorganic materials and the devices made of such materials, and their diverse and emerging applications in any form of integrated circuits and systems will be considered. This could be expanded to topological insulators and spin-polarised materials and devices as well.

Dr. Farzan Gity
Dr. Lida Ansari
Dr. Davoud Dastan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoscale logic and memory devices
  • 1D and 2D nanosensors
  • nanophotonic devices
  • nanoscale systems, thin films, and 2D materials
  • atomic-scale simulations and TCAD modelling
  • nanofabrication and patterning of materials
  • heterogeneous integration
  • structural, electrical, and chemical characterisation

Published Papers (1 paper)

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Research

11 pages, 5006 KiB  
Article
Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C
by Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley and Farzan Gity
Crystals 2021, 11(2), 160; https://doi.org/10.3390/cryst11020160 - 5 Feb 2021
Cited by 4 | Viewed by 3251
Abstract
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2 [...] Read more.
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material. Full article
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