Advanced Research of Oxide Thin Film Transistors

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 3136

Special Issue Editors


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Guest Editor
3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: TCAD simulation; oxide TFTs; flexible electronics; device physics; oxide thin films; oxide transistors; VCM memristors
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
NOVA School of Sciences and Technology, FCT NOVA, CENIMAT|i3N, Largo da Torre, 2825-149 Caparica, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: thin-film devices; microelectronic devices; metal oxides; flexible electronics and sensors; memory-based applications; perylene-based electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Oxide TFTs have found application in the display industry and are now candidates not only for the next generation of displays but also for new electronic paradigms expected to improve welfare (and revenue). These include flexible large-area systems, wearable electronics, and the device integration of a large number of “smart objects” for the Internet of Things and industrial and environmental monitoring.

However, meeting these ambitious goals requires a continuous push in the field of oxide TFTs to address limiting factors such as instability under thermal, illumination, and bias stress and limited charge mobility. Furthermore, there is an increasing focus on sustainable approaches, such as using In-free materials and solution processing techniques to lower costs and enable compatibility with roll-to-roll and printing processes. The investigation of material properties is of particular relevance in these cases, as more defective materials are expected. Regarding the device architecture, channel length scaling (< 1 μm) and improved architectures are required to meet operational frequencies for data communication (13.56 MHz in RFID/NFC tags).

This multidisciplinary Special Issue provides the opportunity for researchers to present recent advancements that tackle these and other issues relating to oxide TFTs, with both experimental and theoretical research being appreciated. The scope of the research may focus on different topics, from material processing and the characterization of oxide materials to their implementation in devices and circuits and their electronic applications.

Relevant topics may include (but are not limited to):

  • Material characterization (mechanical, chemical, electrical, optical, etc.);
  • Sustainable materials and processes;
  • Transparent/flexible electronics;
  • Device physics (modelling and simulation);
  • Performance and stability;
  • Device architectures;
  • Circuits and electronic systems.

Besides original research, short reviews concerning recent advances in oxide TFTs will also be accepted.

Dr. Jorge Martins
Dr. Joana Dória Vaz Pinto
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

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Keywords

  • oxide TFTs
  • oxide thin films
  • solution-based processes
  • sustainable materials
  • device physics
  • flexible electronics
  • transparent electronics

Published Papers (1 paper)

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Research

14 pages, 2883 KiB  
Article
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV
by Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Honggyu Kim, Fan Ren and Stephen J. Pearton
Crystals 2023, 13(6), 886; https://doi.org/10.3390/cryst13060886 - 28 May 2023
Cited by 18 | Viewed by 2385
Abstract
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3 [...] Read more.
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3) β-Ga2O3 substrates, exhibited breakdown voltages >8 kV over large areas (>1 cm2). The key requirements were low drift layer doping concentrations (<1016 cm3), low power during the NiO deposition to avoid interfacial damage at the heterointerface and formation of a guard ring using extension of the NiO beyond the cathode metal contact. Breakdown still occurred at the contact periphery, suggesting that further optimization of the edge termination could produce even larger breakdown voltages. On-state resistances without substrate thinning were <10 mΩ.cm−2, leading to power figure-of-merits >9 GW.cm−2. The devices showed an almost temperature-independent breakdown to 600 K. These results show the remarkable potential of NiO/Ga2O3 rectifiers for performance beyond the limits of both SiC and GaN. The important points to achieve the excellent performance were: (1) low drift doping concentration, (2) low power during the NiO deposition and (3) formation of a guard ring. Full article
(This article belongs to the Special Issue Advanced Research of Oxide Thin Film Transistors)
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