Advanced Research in 2D Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: 20 September 2025 | Viewed by 3241

Special Issue Editors

Department of Physics, University of Washington, Seattle, WA, USA
Interests: graphene; transition metal dichalcogenides; 2D materials; quantum transport; low-temperature; high magnetic field; high pressure

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Guest Editor
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, China
Interests: electrocatalysis; hybrid sodium-air batteries; zinc-air batteries; water-splitting; graphene; transition metal oxide; phosphorus synthesis
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Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials have been at the core of intense research and development since the isolation of the first two-dimensional material—graphene. Caused by 2D confinement, 2D materials opened a completely novel chapter of the study of condensed matter. Novel extraordinary properties are discovered almost daily. Meanwhile, the vast amount of research leaves little doubt about the potential of 2D materials due to their unique topological, optical, electronic, magnetic, thermal, and mechanical properties. The large family consisting of 2D materials opens unprecedented opportunities for both fundamental science and various technological applications.

Although opportunities abound, significant challenges remain in the use of 2D materials. Currently, there are no available integrated chips or enabled products based on 2D materials. Furthermore, methods for enabling large-scale production with high-quality and controlled structures are still lacking. While assembling different 2D layers offers unique ways to control various phenomena including optical, electrical, thermal, magnetic, and topological phenomena, issues such as device-to-device variations, reliability, stability, and performance of 2D heterostructures in electronic and optoelectronic applications still need to be addressed. Nonetheless, 2D materials remain a promising research direction and have the potential to make a significant contribution. Besides electronic application, 2D materials are expected to facilitate the development of sustainable technology, such as energy storage, conversion, and catalysis. There are still many applications of 2D materials that we should develop. With the need to accelerate materials discovery and design, new technologies including machine learning and artificial intelligence need to be employed. Methodological development in theoretical modelling and computational algorithms, in close interaction with experiments, become necessary for the discovery of the extraordinary properties of 2D materials.

At Crystals, we wish to support research providing insight into the path toward addressing the challenges that hinder the development of 2D materials. Crystals is ideally a forum for the advancement of our understanding of the growth, processing, and characterization of materials. Additionally, their mechanical, chemical, electronic, magnetic, optical, and topological properties and their diverse applications are all considered to be of importance.

With a view to achieving these goals, this Special Issue will focus on new ideas and advanced research in 2D materials and will cover a wide range of topics. Both original research and review articles are welcomed, with areas of interest including, but not limited to:

  • Synthesis, fabrication, characterization, and properties of 2D materials.
  • Applications involving 2D materials.
  • Theoretical calculation methods involving 2D materials.

Dr. Bosong Sun
Dr. Kwun Nam Hui
Guest Editors

Manuscript Submission Information

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Keywords

  • synthesis and fabrication of 2D materials
  • characterization and properties of 2D materials
  • applications involving 2D materials
  • theories involving 2D materials
  • machine learning involving 2D materials

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Published Papers (3 papers)

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Research

9 pages, 2658 KiB  
Article
Performance Enhancement of MoSe2 and WSe2 Based Junction Field Effect Transistors with Gate-All-Around Structure
by Changlim Woo, Abdelkader Abderrahmane, Pangum Jung and Pilju Ko
Crystals 2024, 14(11), 984; https://doi.org/10.3390/cryst14110984 - 15 Nov 2024
Viewed by 644
Abstract
Recently, two-dimensional materials have gained significant attention due to their outstanding properties such as high charge mobility, mechanical strength, and electrical characteristics. These materials are considered one of the most promising solutions to overcome the limitations of semiconductor technology and are being utilized [...] Read more.
Recently, two-dimensional materials have gained significant attention due to their outstanding properties such as high charge mobility, mechanical strength, and electrical characteristics. These materials are considered one of the most promising solutions to overcome the limitations of semiconductor technology and are being utilized in various semiconductor device research. In particular, molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2) are actively being developed for device applications due to their high electron mobility, optical properties, and electrical characteristics. In this study, we fabricated MoSe2 and WSe2-based junction field-effect transistors (JFET) and further deposited two-dimensional materials on the same device to fabricate and compare JFETs with a gate-all-around (GAA) structure. The research results showed that the GAA-structure JFET exhibited performance improvements in drain current, subthreshold swing (SS) transconductance (gm), and mobility, achieving enhancements ranging from a minimum of 1.2 times to a maximum of 10 times compared to conventional JFET. Full article
(This article belongs to the Special Issue Advanced Research in 2D Materials)
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12 pages, 2763 KiB  
Article
Terahertz Modulation Properties Based on ReS2/Si Heterojunction Films
by Xunjun He, Han Xu, Hongyuan Liu, Jia Nie and Guangjun Lu
Crystals 2024, 14(9), 799; https://doi.org/10.3390/cryst14090799 - 10 Sep 2024
Viewed by 603
Abstract
Low cost, low power consumption and high performance are urgent needs for the application of terahertz modulation devices in the 6G field. Rhenium disulfide (ReS2) is one of the ideal candidate materials due to its unique direct band gap, but it [...] Read more.
Low cost, low power consumption and high performance are urgent needs for the application of terahertz modulation devices in the 6G field. Rhenium disulfide (ReS2) is one of the ideal candidate materials due to its unique direct band gap, but it lacks in-depth research. In this work, a highly stable ReS2 nanodispersion was prepared by liquid-phase exfoliation, and a uniform, dense and well-crystallized ReS2 film was prepared on high-resistivity silicon by drop casting. The morphological, optical and structural properties of the ReS2/Si heterojunction film were characterized by OM, SEM, AFM, XRD, RS and PL. The terahertz performance was tested by using a homemade THz-TDS instrument, and the influence of different laser wavelengths and powers on the terahertz modulation performance of the sample was analyzed. The modulation depth of the sample was calculated based on the transmission curve, and the changes in the refractive index and conductivity of the sample with frequency at the corresponding laser power were calculated. The results show that the fabricated ReS2/Si heterojunction terahertz modulator can stably achieve 30% broadband modulation in the range of 0.3~1.5 THz under the low-power pumping of 1555 mW/cm2, and the maximum conductivity is 3.8 Ω−1m−1. Full article
(This article belongs to the Special Issue Advanced Research in 2D Materials)
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14 pages, 11558 KiB  
Article
Molecular Dynamics Study of Friction between Ag Nanoparticle and Two-Dimensional Titanium Carbide Ti2C (MXene)
by Vadym Borysiuk, Iakov A. Lyashenko and Valentin L. Popov
Crystals 2024, 14(3), 272; https://doi.org/10.3390/cryst14030272 - 12 Mar 2024
Cited by 1 | Viewed by 1486
Abstract
We report the results of atomistic simulations of friction between two-dimensional titanium carbide Ti2C (MXene) and a silver nanoparticle located on its surface. Numerical experiments were performed within classical molecular dynamics methods using a previously developed scheme for simulations of interactions [...] Read more.
We report the results of atomistic simulations of friction between two-dimensional titanium carbide Ti2C (MXene) and a silver nanoparticle located on its surface. Numerical experiments were performed within classical molecular dynamics methods using a previously developed scheme for simulations of interactions between MXenes and metal nanoparticles. In the computer experiments performed, both tangential and shear forces were applied to the Ag nanoparticle to initiate its sliding on the surface of the Ti2C MXene. During the simulations, the nanotribological parameters of the studied system, such as the friction force, contact area, friction coefficient, and tangential shear, were computed. It is shown that, for the studied system, the friction coefficient does not depend on the velocity of nanoparticle movement or the contact area. Additionally, the sliding friction of the nanoparticle on the flexible substrate was considered. The latter case is characterized by a larger friction coefficient and contact area due to the formation of wrinkles on the surface of the substrate. Full article
(This article belongs to the Special Issue Advanced Research in 2D Materials)
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