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Crystals
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Crystals for Radiation Detectors, UV Filters and Lasers
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Crystals for Radiation Detectors, UV Filters and Lasers

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 March 2024) | Viewed by 6201

Special Issue Editor

Dr. Rajesh Paulraj

E-Mail Website
Guest Editor
Centre for Crystal Growth, Department of Physics, Sri Sivasubramania Nadar College of Engineering, Kalavakkam, Tamilnadu, India
Interests: crystal growth; scintillation materials; plastic scintillators; NLO materials; radiation detectors; chalcogenides; defects; impurities

Special Issue Information

Dear Colleagues,

Single-crystal-based radiation detectors, crystalline materials for optical UV band pass filters and lasers have drawn great attention from scientists studying radiation detector technology due to their numerous application potentials. There are two types of crystal-based detector: solid-state detectors and scintillator detectors. Solid-state detectors are semiconductors that use the ionizing radiation principle, whereas scintillation detectors work with the principle of the excitation effect of incident radiation. These detectors can offer a multitude of information about incident radiation, such as the energy, charge, particle, and source direction. This leads to a wide range of applications in nuclear medical diagnostic systems (e.g., a significant part of non-invasive clinical examinations is played by radiation detectors). Detection solutions are also used in a variety of industrial applications, such as oil and process monitoring as well as environmental safety. Similarly, crystals formed of a solid solution act as good materials for filtering ultraviolet light with good temperature stability. They are useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.

These applications can be fulfilled by producing high-quality single crystals and studying their properties for use in everyday life. Optimized growth, crystalline perfection, and improved applications can be realized by understanding the underlying science. Coupling basic science with the engineering of single crystals will lead to the development of portable and efficient detectors. The development and characterization of these new materials are required for the development of technology.

Dr. Rajesh Paulraj
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • crystal growth
  • pulse shape discrimination
  • radiation hardness
  • crystals for lasers
  • UV filters
  • scintillation efficiency
  • bulk crystal growth
  • nonlinear optical materials
  • novel materials and structures
  • defects and impurities in crystalline materials
  • organic and plastic scintillating materials
  • pulse shape discrimination
  • Chalcogenide crystals
  • Characterization of Crystalline materials

Published Papers (4 papers)

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Research

13 pages, 2368 KiB  
Article
Crystal Growth and Spectroscopy of Yb2+-Doped CsI Single Crystal
by Dmitriy Sofich, Alexandra Myasnikova, Alexander Bogdanov, Viktorija Pankratova, Vladimir Pankratov, Ekaterina Kaneva and Roman Shendrik
Crystals 2024, 14(6), 500; https://doi.org/10.3390/cryst14060500 - 24 May 2024
Viewed by 474
Abstract
The single crystals of CsI-Yb2+ were grown, and their spectroscopic studies were conducted. The observed luminescence in CsI-Yb2+ is due to 5d–4f transitions in Yb2+ ions. Using time-resolved spectroscopy, spin-allowed and spin-forbidden radiative transitions of ytterbium ions at room temperature [...] Read more.
The single crystals of CsI-Yb2+ were grown, and their spectroscopic studies were conducted. The observed luminescence in CsI-Yb2+ is due to 5d–4f transitions in Yb2+ ions. Using time-resolved spectroscopy, spin-allowed and spin-forbidden radiative transitions of ytterbium ions at room temperature were found. The excitation spectra of Yb2+ luminescence bands were obtained in the range of 3–45 eV. The mechanism of charge compensation of Yb2+ ions in a CsI crystal was also studied, the spectrum of the thermally stimulated depolarization current was measured, and the activation energies of the two observed peaks were calculated. These peaks belong to impurity–vacancy complexes in two different positions. The charge compensation of Yb2+ occurs via cation vacancies in the nearest-neighbor and next-nearest-neighbor positions.The Yb2+ ions are promising dopants for CsI scintillators and X-ray phosphors in combination with SiPM photodetectors. Full article
(This article belongs to the Special Issue Crystals for Radiation Detectors, UV Filters and Lasers)
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13 pages, 2974 KiB  
Article
The Effect of Fast Kr Ion Irradiation on the Optical Absorption, Luminescence, and Raman Spectra of BaFBr Crystals
by Abdirash Akilbekov, Daurzhan Kenbayev, Alma Dauletbekova, Elena Polisadova, Victor Yakovlev, Zhakyp Karipbayev, Alexey Shalaev, Edgars Elsts and Anatoli I. Popov
Crystals 2023, 13(8), 1260; https://doi.org/10.3390/cryst13081260 - 16 Aug 2023
Cited by 1 | Viewed by 1426
Abstract
In this work, using photoluminescence (PL), optical absorption (OA), Raman spectroscopy (RS), and atomic force microscopy (AFM), the radiation damage of BaFBr crystals irradiated with 147 MeV 84Kr ions to fluences (1010–1014) cm2 was investigated. The manifestations [...] Read more.
In this work, using photoluminescence (PL), optical absorption (OA), Raman spectroscopy (RS), and atomic force microscopy (AFM), the radiation damage of BaFBr crystals irradiated with 147 MeV 84Kr ions to fluences (1010–1014) cm2 was investigated. The manifestations of the oxygen impurity contained in the studied crystals on the effects associated with ion irradiation are also considered. In unirradiated crystals, the PL spectra exhibited bands related to the oxygen impurity. Moreover, it was found that quenching and a shift of the PL maximum occur, which is due to the fact that, with increasing dose, aggregation of defects occurs. Electronic and hole aggregate color centers appear mainly in the bromide sublattice. A detailed study of the Raman spectra and comparison with the corresponding data for KBr single crystals made it possible to reveal the corresponding manifestations of the Raman modes of complex Br3−-type hole centers. Full article
(This article belongs to the Special Issue Crystals for Radiation Detectors, UV Filters and Lasers)
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12 pages, 3182 KiB  
Article
Development of Single Crystal CsPbBr3 Radiation Detectors from Low-Cost Solution Synthesized Material
by David A. Kunar, Matthew F. Webster, Yu Wu, Ramjee Kandel and Peng Li Wang
Crystals 2023, 13(5), 762; https://doi.org/10.3390/cryst13050762 - 3 May 2023
Cited by 2 | Viewed by 2232
Abstract
The all-inorganic perovskite CsPbBr3 is a strong candidate for room-temperature, semiconducting radiation detecting applications. With a high stopping power, a large bandgap, and a high mobility-lifetime (μτ) product for both holes and electrons, CsPbBr3 contains all the desirable properties [...] Read more.
The all-inorganic perovskite CsPbBr3 is a strong candidate for room-temperature, semiconducting radiation detecting applications. With a high stopping power, a large bandgap, and a high mobility-lifetime (μτ) product for both holes and electrons, CsPbBr3 contains all the desirable properties of a room temperature radiation detector. Unfortunately, the production of detector-grade single crystal samples requires high quality starting materials, which must be further processed to achieve the desired purity for semiconducting operation. We have developed a modified zone refining method combining the continuous purification of ternary CsPbBr3 and the subsequent crystal growth step. Taking advantage of this technique, low-cost polycrystalline CsPbBr3 synthesized via solution chemistry processes can be directly used in the production of high-purity, detector-grade crystals. Semi-cylindrical CsPbBr3 single crystal ingots up to 120 mm in length and 22 mm in diameter were obtained. The final product exhibited good chemical stoichiometry and high trace metal purity (2.34 ppm across 73 elements). Detector devices fabricated from the crystal wafers displayed resistivities > 2.0 × 108 Ω·cm and high photocurrent responses. The radiation detectors were able to produce spectroscopy responses to 241Am α-particle. The hole mobility-lifetime (μτH) product of the detectors was determined to be in the range of 1.45 × 10−3 cm2/V. Full article
(This article belongs to the Special Issue Crystals for Radiation Detectors, UV Filters and Lasers)
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13 pages, 6774 KiB  
Article
Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity
by Amal Mohamed Ahmed Ali, Naser M. Ahmed, Norlaili A. Kabir, Natheer A. Algadri, Ahmad M. AL-Diabat, I. A. Wadi, Ahmed Alsadig, Osamah A. Aldaghri and Khalid H. Ibnaouf
Crystals 2023, 13(2), 314; https://doi.org/10.3390/cryst13020314 - 14 Feb 2023
Cited by 2 | Viewed by 1379
Abstract
Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of [...] Read more.
Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of a cost-effective X-ray radiation detector based on the extended gate field effect transistors (EGFET). We examined the sensitivity of Al-doped Zinc oxide (AZO) of varying thicknesses, fabricated by chemical bath deposition (CBD), following X-ray irradiation with low and high doses. EGFETs were used to connect samples for their detection capabilities. As a function of the absorbed dose, the response was analyzed based on the threshold voltage shift, and the sensitivity of each device was also evaluated. We demonstrated that thin films are less sensitive to radiation than their disk-type EG devices. However, performance aspects of the devices, such as radiation exposure sensitivity and active dosage region, were found to be significantly reliant on the composition and thickness of the materials used. These structures may be a cost-effective alternative for real-time, room-temperature radiation detectors. Full article
(This article belongs to the Special Issue Crystals for Radiation Detectors, UV Filters and Lasers)
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