Growth and Characterization of Chalcogenide Semiconductors

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (15 October 2019)

Special Issue Editor


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Guest Editor
Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
Interests: chalcogenide compounds; 2D semiconductors; crystal growth; semiconductor optoelectronics; optical properties of semicoductors; modulation spectroscopy

Special Issue Information

Dear Colleagues,

Chalcogenide compounds are related matter consist of at least one chalcogen anion and one cation of an electro-positive element. They are commonly known as sulphides, selenides, tellurides, and sometimes polonides. Many of the chalcogenides are semiconductors, and may contain monochalcogenides, dichalcogenides and trichalcogenides, etc. Their cation elements can be in group IA (Li, Na, ..), IIA (Be, Mg, ..), IIIA (Ga, In, ..), IVA (Ge, Sn, ..), VA (As, Bi, ..), or transition-metal chalcogenides. Some of the renowned materials are MgS and CaS, etc. (IIA monochalcogenide); GaSe, InSe, GaS, and Ga2S3, etc. (IIIA mono- and trichalcogenides); GeS, GeSe2, SnS, and SnSe, etc. (IVA mono- and dichalcogenides); and As2S3, Bi2Se3 and Bi2Te3, etc. (VA trichalcogenides) etc. The family of transition-metal chalcogenides includes transition-metal monochalcogenides (TMMCs) like ZnS and CdS, etc. and transition-metal dichalcogenides (TMDCs) like MX2 (M=Mo, W, Re, Ti, Zr, Hf, etc. and X=S, Se, Te). Many of the TM and non-TM chalcogenides are very promising for applications in fields related to semiconductor electronics, optoelectronics, bioelectronics, energy and the environment, etc. In particular, most chalcogenides are usually crystallized in a layered hexagonal related structure, a so-called two-dimensional (2D) material. The 2D materials are specially used for large-area, ultra-thin, flexible and curved devices. The topic is currently undergoing enthusiastic study.

The growth methods for chalcogenides crystals can be either bulk form, like the Bridgman method, the travelling heating method, chemical vapor transport, etc. or thin-film form, like CVD, MOCVD, MBE, the chemical method, and different sputtering techniques. The related characterization techniques for chalcogenides include structural, theoretical, physical and chemical methods.

Owing to the novelty and interesting properties of chalcogenides, we invite researchers to submit papers to this Special Issue entitled “Growth and Characterization of Chalcogenide Semiconductor” in the journal Crystals. The collected information of this special issue will interchange knowledges and interact experiences to material researchers and all of the readers. We welcome your contribution to this Special Issue on chalcogenides.

Prof. Ching-Hwa Ho
Guest Editor

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Keywords

  • Synthesis of chalcogenide compounds
  • Crystal growth
  • Structure study
  • 2D chalcogenide studies
  • Semiconductors
  • Metallic properties
  • Optical properties
  • Electronics and optoelectronics devices
  • Photoluminescence
  • Spectroscopy
  • Carrier transport
  • Photodetector
  • Defect studies
  • Thermoelectric properties
  • Photocatalysis properties
  • Band and theoretical calculations
  • Other characterization tools related to chalcogenides

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Published Papers (1 paper)

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Research

9 pages, 1701 KiB  
Article
PbI2 Single Crystal Growth and Its Optical Property Study
by Der-Yuh Lin, Bo-Cheng Guo, Zih-You Dai, Chia-Feng Lin and Hung-Pin Hsu
Crystals 2019, 9(11), 589; https://doi.org/10.3390/cryst9110589 - 9 Nov 2019
Cited by 31 | Viewed by 5078
Abstract
In this work, we used the chemical vapor transport (CVT) method to grow PbI2 crystals using iodine as a self-transporting agent. The crystals’ structure, composition, and uniformity were confirmed by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) measurements. We investigated the [...] Read more.
In this work, we used the chemical vapor transport (CVT) method to grow PbI2 crystals using iodine as a self-transporting agent. The crystals’ structure, composition, and uniformity were confirmed by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) measurements. We investigated the band gap energy using absorption spectroscopy measurements. Furthermore, we explored the temperature dependence of the band gap energy, which shifts from 2.346 eV at 300 K to 2.487 eV at 20 K, and extracted the temperature coefficients. A prototype photodetector with a lateral metal–semiconductor–metal (MSM) configuration was fabricated to evaluate its photoelectric properties using a photoconductivity spectrum (PC) and persistent photoconductivity (PPC) experiments. The resonance-like PC peak indicates the excitonic transition in absorption. The photoresponse ILight/IDark-1 is up to 200%. Full article
(This article belongs to the Special Issue Growth and Characterization of Chalcogenide Semiconductors)
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