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Crystals
Special Issues
Advanced Laser Crystals
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Advanced Laser Crystals

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 1613

Special Issue Editors

Prof. Dr. Ping Li

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Guest Editor
School of Information Science and Engineering, Shandong University, Jinan 250100, China
Interests: laser crystal; passively Q-switched; raman crystal; nonlinear laser crystal
Prof. Dr. Jun Chang

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Guest Editor
School of Information Science and Engineering and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, China
Interests: laser physics and technology and applications
Dr. Xiaohan Chen

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Guest Editor
School of Information Science and Engineering, Shandong University, Jinan 250100, China
Interests: solid-state laser; semiconductor laser
Dr. Wenjing Tang

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Guest Editor
School of Physical Science and Technology, Jinan University, Jinan 250022, China
Interests: solid-state laser; semiconductor laser

Special Issue Information

Dear Colleagues,

The emergence of new laser crystals or the development of new properties will drive the progress of laser technology and open up new fields of application, representing aboth a traditional and cutting-edge direction in laser technology. Recently, ultra-intense lasers, ultra-fast lasers, ultra-narrow linewidth lasers, ultra-high repetition frequency lasers, new wave bands and tunable lasers have been intensively investigated. New solid laser materials such as laser crystals, ceramics, glasses, and nonlinear modulation crystals continue to emerge. In response to the needs of laser technology, designing laser crystals and developing new properties of laser crystals have always been the goals of researchers in this field. The present Special Issue on “Advanced Laser Crystals” aims to present status reports summarizing the progress achieved in the last few years. The scope encompasses fundamental research, technology development, and new devices such as laser crystals and nonlinear modulation crystals, reflecting the latest research in the field. This Special Issue will further promote the development of the cutting-edge field of "laser crystals".

Prof. Dr. Ping Li
Prof. Dr. Jun Chang
Dr. Xiaohan Chen
Dr. Wenjing Tang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • laser crystal
  • raman crystal
  • passively Q-switched
  • nonlinear laser crystal
  • laser physics and technology

Published Papers (1 paper)

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Research

9 pages, 1517 KiB  
Article
Effect of Dopants on Laser-Induced Damage Threshold of ZnGeP2
by Nikolay Yudin, Mikhail Zinoviev, Vladimir Kuznetsov, Elena Slyunko, Sergey Podzvalov, Vladimir Voevodin, Alexey Lysenko, Andrey Kalsin, Leyla Shaimerdenova, Houssain Baalbaki and Vera Kalygina
Crystals 2023, 13(3), 440; https://doi.org/10.3390/cryst13030440 - 3 Mar 2023
Cited by 5 | Viewed by 1380
Abstract
The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to an increase in the [...] Read more.
The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to an increase in the laser-induced damage threshold (LIDT) of a single crystal (monocrystal), ZnGeP2; upon annealing at a temperature of 750 °C, the damage threshold of samples doped with Mg and Se increases by 31% and 21% from 2.2 ± 0.1 J/cm2 to 2.9 ± 0.1 and 2.7 ± 0.1 J/cm2, respectively. When ZnGeP2 is doped with Ca, the opposite trend is observed. It has been suggested that the changes in the LIDT depending on the introduced impurity by diffusion can be explained by the creation of additional energy dissipation channels due to the processes of radiative and fast non-radiative relaxation through impurity energy levels, which further requires experimental confirmation. Full article
(This article belongs to the Special Issue Advanced Laser Crystals)
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