Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Polycrystalline Ceramics".
Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 11781
Special Issue Editors
2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Interests: ferroelectrics; magnetism; multiferroics; scanning probe microscopy; high energy density capacitor
Special Issues, Collections and Topics in MDPI journals
Interests: ferroelectrics; multiferroics; multicaloric materials, oixde based high energy density capacitor, scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Multiferroics represent an appealing class of multifunctional materials that simultaneously exhibit several ferroic orders such as ferroelectricity, (anti)ferromagnetism, and ferroelasticity. The coexistence of several order parameters in such materials brings about novel physical phenomena and offers possibilities for new device applications. Of particular interest is the existence of a cross-coupling between the magnetic and electric orders, termed as magnetoelectric (ME) coupling. This coupling enables the control of the ferroelectric polarization by a magnetic field and conversely, the manipulation of magnetization by an electric field. Hence, the coexistence of several order parameters and the magnetoelectric coupling in such materials can be exploited for novel memory application. As ferroelectric polarization and magnetization are used to encode binary information in FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), respectively, the coexistence of magnetization and polarization in a multiferroic material allow the realization of four-state logics in a single device. The basic operation of such magnetoelectric random access memories (MERAMs) combines the magnetoelectric coupling with the interfacial exchange, coupling between a multiferroic and a ferromagnet to switch the magnetization of the ferromagnetic layer by using a voltage and vice versa. MeRAM’s key advantages over existing technologies is that it requires extraordinarily low operating voltage with very high-density microelectronic elements, high-speed reading and writing times, and nonvolatility.
Dr. Dhiren K. Pradhan
Dr. Venkata Puli
Prof. Dr. Manuel Henrique Lente
Guest Editors
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Keywords
- multiferroics
- magnetoelectric
- thin films
- nanostructures
- logic and memory devices
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