Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.2
2.4
Journals
Crystals
Special Issues
Advances of Silicon Carbide Crystals
share announcement

Advances of Silicon Carbide Crystals

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (31 August 2023) | Viewed by 7932

Special Issue Editors

Dr. Pan Gao

E-Mail Website
Guest Editor
Artificial Crystals Research Center, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, China
Interests: silicon carbide; crystal growth; semiconductor; growth mechanism; dislocation defect; numerical simulation; scintillator crystal
Hui Chen

E-Mail Website
Guest Editor Assistant
Artificial Crystals Research Center, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, China
Interests: silicon carbide; processing of silicon carbide crystals; analysis of silicon carbide properties

Special Issue Information

Dear Colleagues,

Wide-band gap semiconductor materials and power devices are widely recognized as a revolutionary in electronic and electric power applications. As one of the most studied materials in the research of wide-band gap semiconductors, silicon carbide (SiC) substrates have excellent characteristics. At present, they are widely used in the manufacture of power electronic devices, radio frequency (RF) devices, electric vehicles, 5G base stations and so on. However, the high cost of SiC substrates is still the main bottleneck for their wide application. The fundamental reason for this is that they are difficult to prepare and process large-size and high-quality SiC crystal. In order to reduce the cost of SiC substrate materials, the size of SiC crystals grown by traditional PVT methods was expanded to 8 inches. However, the low yield of SiC crystals prepared by this method is still a major problem that presents researchers with many challenges. At the same time, in order to improve the thickness of the prepared crystals and reduce the dislocation density of SiC crystals, a new liquid-phase growth technology is used to prepare high-quality SiC crystals, and the dawn of commercialization has commenced. Currently, for SiC crystal processing technology, traditional processing technology continues to develop in the direction of process integration. At the same time, laser cold-cutting technology has attracted the attention of enterprises from all over the world, such as Infineon. In brief, the current research on SiC materials is at the stage that it was before the current global pandemic, and advanced semiconductor companies and scientists from all over the world are scrambling to solve the challenges regarding the widespread application of SiC crystals. The present Special Issue on “Advances of Silicon Carbide Crystals” may become a status report summarizing the progress achieved in the last five years.

Dr. Pan Gao
Hui Chen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • crystal growth
  • growth mechanism
  • dislocation defect
  • crystal processing

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

13 pages, 5332 KiB  
Article
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration
by Benedetta Ghezzi, Giovanni Attolini, Matteo Bosi, Marco Negri, Paola Lagonegro, Pasquale M. Rotonda, Christine Cornelissen, Guido Maria Macaluso and Simone Lumetti
Crystals 2023, 13(8), 1280; https://doi.org/10.3390/cryst13081280 - 19 Aug 2023
Viewed by 906
Abstract
Tissue engineering (TE) and nanomedicine require devices with hydrophilic surfaces to better interact with the biological environment. This work presents a study on the wettability of cubic silicon-carbide-based (SiC) surfaces. We developed four cubic silicon-carbide-based epitaxial layers and three nanowire (NW) substrates. Sample [...] Read more.
Tissue engineering (TE) and nanomedicine require devices with hydrophilic surfaces to better interact with the biological environment. This work presents a study on the wettability of cubic silicon-carbide-based (SiC) surfaces. We developed four cubic silicon-carbide-based epitaxial layers and three nanowire (NW) substrates. Sample morphologies were analyzed, and their wettabilities were quantified before and after a hydrogen plasma treatment to remove impurities due to growth residues and enhance hydrophilicity. Moreover, sample biocompatibility has been assessed with regard to L929 cells. Our results showed that core–shell nanowires (SiO2/SiC NWs), with and without hydrogen plasma treatment, are the most suitable candidate material for biological applications due to their high wettability that is not influenced by specific treatments. Biological tests underlined the non-toxicity of the developed biomaterials with regard to murine fibroblasts, and the proliferation assay highlighted the efficacy of all the surfaces with regard to murine osteoblasts. In conclusion, SiO2/SiC NWs offer a suitable substrate to develop platforms and membranes useful for biomedical applications in tissue engineering due to their peculiar characteristics. Full article
(This article belongs to the Special Issue Advances of Silicon Carbide Crystals)
►▼ Show Figures

Figure 1

11 pages, 7025 KiB  
Article
Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
by Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie and Rongkun Wang
Crystals 2023, 13(1), 15; https://doi.org/10.3390/cryst13010015 - 22 Dec 2022
Cited by 6 | Viewed by 3755
Abstract
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful [...] Read more.
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful for solving these problems. In this work, the 4H-SiC samples with different surface roughness were processed by laser slicing. Findings revealed that good surface quality could reduce the damage to the wafer surface during laser slicing, reduce cleavage, and improve the flatness and uniformity of the modified layer. Thus, preprocessing on 4H-SiC can significantly improve the quality and efficiency of laser slicing. Full article
(This article belongs to the Special Issue Advances of Silicon Carbide Crystals)
►▼ Show Figures

Figure 1

11 pages, 794 KiB  
Article
Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing
by Muhammad Idzdihar Idris and Alton Horsfall
Crystals 2022, 12(8), 1111; https://doi.org/10.3390/cryst12081111 - 9 Aug 2022
Cited by 1 | Viewed by 2618
Abstract
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s [...] Read more.
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/dec. The fabricated devices utilised a forming gas (3% H2 in N2) anneal immediately prior to the deposition of the Al2O3 by Atomic Layer Deposition (ALD). A comparison MOSFET using an identical Al2O3 deposition process with a 0.7 nm SiO2 layer had a field effect mobility of approximately 20 cm2V−1s−1. The hydrogen annealed device had a lower density of interface traps (Dit), a lower subthreshold swing, and a significantly reduced hysteresis in the transconductance data than the thin SiO2 sample. This finding solves the issue of inconsistency of device performance using thin film gate dielectric as an interfacial layer by offering a simple and controllable process. Full article
(This article belongs to the Special Issue Advances of Silicon Carbide Crystals)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop