Organic Field-Effect Transistors (OFETs)

A special issue of Electronic Materials (ISSN 2673-3978).

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 677

Special Issue Editors


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Guest Editor
Department of Information Engineering, University of Padova, 35131 Padua, Italy
Interests: electronic devices physics, characterizations, and modelling; perovskite and polymeric solar cells; thin-film transistors; electrolyte-gated tran-sistors; sensors; neural interfaces; organic semiconductors
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Information Engineering, University of Padova, 35131 Padova, Italy
Interests: electronic device physic, characterization, modelling and fabrication processes; thin-film devices; organic field effect transistors; organic semiconductor; printed electronic devices

E-Mail Website
Guest Editor
Department of Information Engineering, University of Padova, 35131 Padua, Italy
Interests: electronic devices physics, characterizations, and modelling; electronic devices reliability; perovskite and polymeric solar cells; thin-film tran-sistors; electrolyte-gated transistors; sensors; neural interfaces; organic semiconductors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Since the fabrication of the first Organic Field-Effect Transistor (OFET) in 1986, researchers’ interest to develop and improve OFET technology has grown exponentially. A remarkable example is the outstanding work conducted by the scientific community to increase the mobility of said technology to above 10 cm2/Vs.

Nowadays, OFETs can be exploited in a wide range of applications, from academic research activities to their commercial implementation targeting OFETs’ distinctive properties and low-cost fabrications. Moreover, several other devices directly originate from OFET technology, among which OFET-based sensors represent a disruptive innovation in the field. This was possibly thanks to the specific properties of organic semiconductors, such as the possibility to tune the electro-chemical properties of the materials and the low-temperature fabrication processes (e.g., ink-jet printing, slot-die …) that opened the door to a new paradigm for the development of flexible and wearable electronics.

Despite all these achievements, some drawbacks are still unsolved. A few examples are the large disparities between p-type and n-type OFETs (both in terms of performance and number of available materials) and the devices’ reliability, which is still poor compared to silicon and III-V semiconductors. To significantly improve OFET theory, these are important aspects that need to be tackled by keep investing on the development of new materials, on the innovation of OFETs fabrication processes, and on the design on novel architectures.

This Special Issue aims at collecting those contributions covering the latest research in the field of Organic Field-Effect Transistors. We are looking for manuscripts exploiting the use of new deposition processes and materials for OFET fabrication, as well as for articles investigating devices characterization, physics, and reliability.

Dr. Nicolò Lago
Dr. Marco Buonomo
Dr. Andrea Cester
Guest Editors

Manuscript Submission Information

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Keywords

  • organic semiconductors
  • thin-film transistors
  • flexible electronics
  • device physics and reliability
  • electrical characterization
  • modeling
  • materials deposition
  • fabrication technologies

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Published Papers

There is no accepted submissions to this special issue at this moment.
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