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Electronic Materials
Volume 5
Issue 3
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Electron. Mater., Volume 5, Issue 3 (September 2024) – 5 articles

Cover Story (view full-size image): A new method for evaluating hot-electron degradation in AlGaN/GaN HEMTs is proposed. This method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. The results show that VTH drift and part of the RON degradation induced by on-state stress are recoverable after 1000 s from stress removal and likely due to the ionization of C-related acceptors in the buffer. Conversely, the remaining part of RON degradation (not recovered in 1000 s) is strongly affected by the surface treatment. The current level set during on-state stress affects the amount of non-recoverable degradation, confirming the involvement of hot electrons. Thanks to the monitoring of the parameters’ recovery, the proposed method provides important insights into the physical mechanism governing the parameters’ degradation. View this paper
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23 pages, 5813 KiB  
Article
Raman Spectroscopy and Electrical Transport in 30Li2O• (67−x) B2O3•(x) SiO2•3Al2O3 Glasses
by Amrit P. Kafle, David McKeown, Winnie Wong-Ng, Meznh Alsubaie, Manar Alenezi, Ian L. Pegg and Biprodas Dutta
Electron. Mater. 2024, 5(3), 166-188; https://doi.org/10.3390/electronicmat5030012 - 12 Sep 2024
Viewed by 947
Abstract
We have investigated the influence of the relative proportions of glass formers in a series of lithium alumino-borosilicate glasses with respect to electrical conductivity (σ) and glass transition temperature (Tg) as functions of glass structure, as determined using Raman spectroscopy. [...] Read more.
We have investigated the influence of the relative proportions of glass formers in a series of lithium alumino-borosilicate glasses with respect to electrical conductivity (σ) and glass transition temperature (Tg) as functions of glass structure, as determined using Raman spectroscopy. The ternary lithium alumino-borate glass exhibits the highest σ and lowest Tg among all the compositions of the glass series, 30Li2O•3Al2O3• (67−x) B2O3•xSiO2. However, as B2O3 is replaced by SiO2, a shallow minimum in σ, as well as a shallow maximum in Tg, are observed near x = 27, where the Raman spectra indicate that isolated diborate/tetraborate/orthoborate groups are being progressively replaced by danburite/reedmergnerite-like borosilicate network units. Overall, as the glasses become silica-rich, σ is minimized, while Tg is maximized. In general, these findings show correlations among Tg (sensitive to network polymerization), σ (proportional to ionic mobility), and the different borate and silicate glass structural units as determined using Raman spectroscopy. Full article
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6 pages, 1103 KiB  
Article
Inkjet Printing of a Gate Insulator: Towards Fully Printable Organic Field Effect Transistor
by Huiwen Bai, Richard M. Voyles and Robert A. Nawrocki
Electron. Mater. 2024, 5(3), 160-165; https://doi.org/10.3390/electronicmat5030011 - 23 Aug 2024
Cited by 1 | Viewed by 763
Abstract
In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop [...] Read more.
In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop frequency, were investigated to optimize OFET performance. Consequently, PVP with a smaller molecular weight of 11 k and a printing direction parallel to the channel, a printing voltage of 18 V, and a drop frequency of 10 kHz showed the best OFET performance. With a direct ink writing-printed organic semiconductor, this work paves the way for fully inkjet-printed OFETs. Full article
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15 pages, 5252 KiB  
Article
C60/CZTS Junction Combination to Improve the Efficiency of CZTS-Based Heterostructure Solar Cells: A Numerical Approach
by Jobair Al Rafi, Md. Ariful Islam, Sayed Mahmud, Mitsuhiro Honda, Yo Ichikawa and Muhammad Athar Uddin
Electron. Mater. 2024, 5(3), 145-159; https://doi.org/10.3390/electronicmat5030010 - 15 Aug 2024
Viewed by 920
Abstract
This work presents a copper zinc tin sulfide (CZTS)-based solar cell structure (AI/ITO/C60/CZTS/SnS/Pt) with C60 as a buffer layer, developed using the SCAPS-1D simulator by optimizing each parameter to calculate the output. Optimizing the parameters, the acceptor concentration and thickness [...] Read more.
This work presents a copper zinc tin sulfide (CZTS)-based solar cell structure (AI/ITO/C60/CZTS/SnS/Pt) with C60 as a buffer layer, developed using the SCAPS-1D simulator by optimizing each parameter to calculate the output. Optimizing the parameters, the acceptor concentration and thickness were altered from 6.0 × 1015 cm−3 to 6.0 × 1018 cm−3 and 1500 nm to 3000 nm, respectively. Although, in this simulator, we can tune the value for the acceptor concentration to 6.0 × 1022, higher doping might present an issue regarding adjustment in the physical experiment. Thus, tunable parameters need to be chosen according to the reliability of the experimental work. The defect density varied from 1.0 × 1014 cm−3 to 1.0 × 1017 cm−3 and the auger hole/electron capture coefficient was determined to be 1.0 × 10−26 cm6 s−1 for the maintenance of the minorities in theoretical to quasi-proper experimental measurements. Although the temperature was intended to be kept near room temperature, this parameter was varied from 290 K to 475 K to investigate the effects of the temperature on this cell. The optimization of the proposed structure resulted in a final acceptor concentration of 6.0 × 1018 cm−3 and a thickness of 3000 nm at a defect density of 1.0 × 1015 cm−3, which will help to satisfy the desired experimental performance. Satisfactory outcomes (VOC = 1.24 V, JSC = 27.03 mA/cm2, FF = 89.96%, η = 30.18%) were found compared to the previous analysis. Full article
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13 pages, 6772 KiB  
Article
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
by Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali and Ferdinando Iucolano
Electron. Mater. 2024, 5(3), 132-144; https://doi.org/10.3390/electronicmat5030009 - 23 Jul 2024
Viewed by 859
Abstract
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. [...] Read more.
In this paper, a new method for evaluating hot-electron degradation in p-GaN gate AlGaN/GaN power HEMTs is proposed. The method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. The results show that VTH drift and part of the RON degradation induced by the on-state stress are recoverable and likely due to the ionization of C-related acceptors in the buffer. This was confirmed by a preliminary characterization of C-related buffer traps. Conversely, the remaining part of RON degradation (not recovered in 1000 s) was strongly affected by the surface treatment. The current level set during on-state stress affected the amount of non-recoverable degradation, confirming the involvement of hot electrons. Thanks to the monitoring of the parameters’ recovery, the proposed method provides important insights into the physical mechanisms governing the parameters’ degradation. This extends the capabilities of state-of-the art systems, without the need for custom setup development. Full article
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31 pages, 7363 KiB  
Review
Recent Advances of Conductive Hydrogels for Flexible Electronics
by Jingyu Wang, Bao Yang, Zhenyu Jiang, Yiping Liu, Licheng Zhou, Zejia Liu and Liqun Tang
Electron. Mater. 2024, 5(3), 101-131; https://doi.org/10.3390/electronicmat5030008 - 22 Jun 2024
Viewed by 1717
Abstract
Conductive hydrogels combine the properties of both hydrogels and conductors, making them soft, flexible, and biocompatible. These properties enable them to conform to irregular surfaces, stretch and bend without losing their electrical conductivity, and interface with biological systems. Conductive hydrogels can be utilized [...] Read more.
Conductive hydrogels combine the properties of both hydrogels and conductors, making them soft, flexible, and biocompatible. These properties enable them to conform to irregular surfaces, stretch and bend without losing their electrical conductivity, and interface with biological systems. Conductive hydrogels can be utilized as conductive traces, electrodes, or as a matrix for flexible electronics. Exciting applications in sensors, tissue engineering, and human-machine interaction have been demonstrated worldwide. This review comprehensively covers the progress in this field, focusing on several main aspects: functional materials, performance improvement strategies, and wearable applications in human-related areas. Furthermore, the major approaches and challenges for improving their mechanical properties, conductivity, and long-term stability are systematically summarized. Full article
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