Ferroelectric Materials and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 15 January 2025 | Viewed by 94

Special Issue Editors


E-Mail Website
Guest Editor
Imec, Kapeldreef 75, 3001 Leuven, Belgium
Interests: thin films; complex oxides; ferroelectrics; diffraction

E-Mail Website
Guest Editor
Imec, 3000 Leuven, Belgium
Interests: ferroelectric memories; semiconductor devices
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Interests: ferroelectric memories; wide band gap semiconductor devices; reliability

Special Issue Information

Dear Colleagues,

Ferroelectric materials have attracted considerable attention in recent years due to their potential broad applications, such as in memory technologies and optical I/O. In memory particularly, ferroelectric materials can offer advantages such as high speed, low power consumption, non-volatility and scalability over conventional materials. However, there are also many challenges and open questions in the synthesis, characterization and integration of ferroelectric materials, as well as in the design and optimization of ferroelectrics for devices. One of the main goals of ferroelectric research should be to understand the fundamental science behind ferroelectric behavior and apply this knowledge to design and optimize ferroelectric device fabrication. Ferroelectric properties strongly depend on the crystal structure and symmetry of the materials, which can be influenced by external factors such as temperature, electric field and strain. Therefore, it is essential to investigate the relationship between the structure and the functionality of ferroelectric materials, and to explore the mechanisms of polarization switching, domain wall motion and phase transitions. Among the various classes of ferroelectric materials, perovskites, wurtzites and fluorite hafnates are of particular interest due to their high polarization, large dielectric response and compatibility with existing semiconductor technology. This Special Issue aims to provide a comprehensive and multidisciplinary overview of the current state-of-the-art and future perspectives of ferroelectric materials and applications. It will feature articles that address the structural, electrical and optical properties of these materials, as well as their potential applications in ferroelectric devices. It will also highlight the emerging trends and challenges in the field, such as novel ferroelectric materials, nanostructures, heterostructures, interfaces and domain engineering, as well as the integration of ferroelectric materials with other functional materials. This overview of the field will showcase the diverse and interdisciplinary applications of ferroelectric materials.

Technical Program Committee Member:
Title: Mr.
Name: Pratik Bagul
Affiliation: Imec, 3000 Leuven, Belgium
Homepage: https://scholar.google.com/citations?user=TKfA1yAAAAAJ&hl=en
E-mail: [email protected]
Research Interests: ferroelectric materials; thin films

Dr. Sean R.C. McMitchell
Dr. Nicolò Ronchi
Dr. Tian-Li Wu
Guest Editors

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Keywords

  • ferroelectric
  • FeRAM
  • memory
  • electro-optical
  • polarization
  • FeFET

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