Perspective in Antiferromagnetic Spintronics

Dear Colleagues,

Antiferromagnetic materials have experienced an accelerated interest, which is likely motivated by the possibility of overcoming limitations in ferromagnet-based devices. Their macroscopic zero-net magnetization and ultrafast dynamics in the picosecond time scale enables new robust, ultrafast, and scalable memory and computing technologies. In recent years, several works have proven that antiferromagnets fulfill the two main requirements to develop these new technologies and devices, which are as follows: (1) the electric control of their magnetic order, via extrinsic and intrinsic Spin Orbit Torques or magnetoelectric effects; and (2) magnetoresistive effects such as anisotropic and anomalous magnetoresistances.

Beyond memory applications, their fast-dynamics make them a suitable candidate for nanoscale Terahertz sources and detectors. Moreover, their low magnon dissipation and large spin coherence length makes it possible to implement new systems for information transmission in quantum computing.

This Special Issue of Magnetochemistry is a good opportunity to publish your innovative research works in antiferromagnetic spintronics, and more specifically, in the fields listed below.

Manuscript Submission Information

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• Antiferromagnetic memory devices
• Electric control of antiferromagnets
• Spin Torques in antiferromagnets
• Dynamics of antiferromagnetic materials
• Electronic and Spintronic devices
• Micromagnetic models and simulations for antiferromagnets
• Terahertz electronics and devices
• Neuromorphic computing