Domain and Structural Engineering of Ferroelectric Thin Films
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 264
Special Issue Editor
Interests: ferroelectric domain structure; strained crystal structure; crystallinity; energy harvesting; high density data storage; lead-free ferroelectrics; piezoelectric power generator; solar cell; flexible electronic device; first principle calculation; flexoelectric domain tailoring
Special Issue Information
Dear Colleagues,
We are pleased to invite you to submit your research papers to this Special Issue, entitiled “Domain and Structural Engineering of Ferroelectric Thin Films”, which will be published in Materials.
Ferroelectric thin films have been widely reseached for various applictions such as non-volatile random access memories, actuactors, senosors, waveguides, piezoelectric power generators, solar celles, flexible devices, etc. Domain and structure engineering of ferroelectric thin films is one of main issues to enhance physical properties, as well as device efficiencies, related to ferroelectric thin films.
If you have any questions, please do not hesitate to contact me.
Prof. Jong Yeog Son
Guest Editor
Manuscript Submission Information
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Keywords
- ferroelectric domain structure
- strained crystal structure
- crystallinity
- energy harvesting
- high density data storage
- lead-free ferroelectrics
- piezoelectric power generator
- solar cell
- flexible electronic device
- first-principle calculation
- flexoelectric domain tailoring
