Novel Ultra Wide Bandgap Power Devices and Materials
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".
Deadline for manuscript submissions: closed (30 April 2021) | Viewed by 608
Special Issue Editor
Special Issue Information
Ultra-wide bandgap (UWBG) devices are attracting increasing attention due to their potentially higher ruggedness in power electronics applications and harsh environments. Promising UWBG materials include but are not limited to gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), and boron nitride (BN). Due to their ultra-wide bandgaps (>3.5eV), they are expected to have higher breakdown voltages and to be more immune to failure in radiative and highly temperate environments. However, due to the large bandgaps, shallow dopants are rare. Therefore, novel devices are required to fully unfurl their power. Examples of novel devices include Ga2O3 junctionless devices, devices with special edge termination structures such as Ar implant, NiO/Ga2O3 p-n diode, diamonds with surface hydrogen passivation, and AlyGa1-yN/AlxGa1-xN heterostructure using 2DEG for conduction. Since UWBG materials are still in their nascent stage, innovative growth techniques are critical to reducing the device cost for commercial use. Ab initio simulations are also critical to understanding and predicting material properties. TCAD simulations are useful as a cost-effective way to study novel device structures. Therefore, this Special Issue seeks to showcase research papers and review articles that focus on novel UWBG power device and material development through experimental and theoretical studies. Studies of UWBG power device and circuit interaction and co-optimization are also highly sought after.
Dr. Hiu-Yung Wong
Guest Editor
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Keywords
- ultra-wide bandgap
- diamond
- aluminum nitride
- gallium oxide
- boron nitride
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