Amorphous and Nanostructured Materials for Optoelectronic Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 1253

Special Issue Editor


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Guest Editor
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Interests: wide bandgap semiconductors and their optoelectronic devices

Special Issue Information

Dear Colleagues,

Optoelectronic devices, including light-emitting diodes, solar cells, photodetectors, and lasers, have been extensively explored for various applications in the fields of energy, communication, and healthcare. In recent years, amorphous and nanostructured materials (both inorganic and organic materials) have shown attractive chemical and physical properties and potential applications in optoelectronic devices. Various new materials, new nanostructures, new mechanisms, and new device designs have been found to achieve high-performance optoelectronic devices.

This Special Issue is open to original research or review articles that focus on amorphous and nanostructured materials and optoelectronic devices used in energy, lighting and display, photodetection, and other fields, including but not limited to:

  • Synthesis and characterization of amorphous and nanostructured materials;
  • Materials for light-emitting diodes and lasers;
  • Materials for solar cells;
  • Materials for photodetectors.

We welcome contributions within the above topics.

Prof. Dr. Kewei Liu
Guest Editor

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Keywords

  • amorphous
  • nanaostructures
  • optoelectronic
  • semiconductor
  • LED
  • laser
  • solar cell
  • photodetector

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Published Papers (1 paper)

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Research

11 pages, 4003 KiB  
Article
Introduce Ce3+ Ions to Realize Enhancement of C+L Band Luminescence of KMnF3: Yb, Er Nanoparticles
by Hao Cui, Daguang Li, Yu Yang, Yuewu Fu, Yanhui Dong, Jing Yin, Weiping Qin, Zhixu Jia and Dan Zhao
Nanomaterials 2023, 13(15), 2153; https://doi.org/10.3390/nano13152153 - 25 Jul 2023
Viewed by 1059
Abstract
Polymer-based waveguide amplifiers are essential components in integrated optical systems, as their gain bandwidths directly determine the operating wavelength of optical circuits. However, development of the wideband gain media has been challenging, making it difficult to fabricate devices with broadband amplification capability. Rare [...] Read more.
Polymer-based waveguide amplifiers are essential components in integrated optical systems, as their gain bandwidths directly determine the operating wavelength of optical circuits. However, development of the wideband gain media has been challenging, making it difficult to fabricate devices with broadband amplification capability. Rare earth ion-doped nanoparticles (NPs) are a key component in the gain media, and their full width at half maximum (FWHM) of the emission peak decides the final gain bandwidth of the gain media. Here, KMnF3: Yb, Er, Ce@KMnF3: Yb NPs with the broad full width at half maximum (FWHM) of the emission peak covering the S+C band was prepared. The NPs were synthesized using a hydrothermal method, and the FWHM of the emission peak of NPs reached 76 nm under the excitation of a 980 nm laser. The introduction of Ce3+ ions and a core-shell structure coating greatly enhanced the emission intensity of NPs at C band. Since KMnF3: Yb, Er, Ce@KMnF3: Yb NPs have exceptional broadband luminescence properties at C band, KMnF3: Yb, Er, Ce@KMnF3: Yb NPs can be the potential gain medium in the future polymer-based waveguide amplifiers. Full article
(This article belongs to the Special Issue Amorphous and Nanostructured Materials for Optoelectronic Devices)
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