Quantum Nanomaterials for Advanced Nanoelectronics and Optoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 951

Special Issue Editor


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Guest Editor
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: bosonics devices; nano-electronics; solid-state superfluid devices; optoelectronic 2D physics; RT quantum computing

Special Issue Information

Dear Colleagues,

We are happy to announce a special issue in the journal “Nanomaterials” entitled “Quantum nanomaterials for advanced nanoelectronics and optoelectronics”.

Tremendous research interest has been employed over the last few decades on quantum nanomaterials for the development of advanced nanoelectronics and optoelectronics applications. Low-dimensional quantum nanomaterials from zero-dimension (OD) to two-dimension (2D) exhibit extraordinary electronic, optical, excitonic, photonic, plasmonic, chemical, and thermal properties drastically different from the classical nature of three-dimensional (3D) materials. Exciting and novel quantum nanomaterial functionalities and new technology benchmarks are deemed necessary for advanced nanoelectronics and optoelectronics development in the future.

This special issue will focus on low-dimensional quantum materials such as (not limited to):

  • 0D: Quantum dots, nanoparticles, 2D quantum dots, fullerenes, atomic clusters, etc;
  • 1D: Carbon and non-carbon nanotubes, nanowires, nanoribbons, nanofibers, etc;
  • 2D: vdWs materials (graphene, GO, hBN, TMDc, TMMs, BP, tellurene), oxide nanofilms, etc.
  • Nanocomposites, inorganic-organic nanocomposite, nanoBio materials.

We invite original research articles/letters as well as review articles covering the current progress and future advances in the nanoelectronics and optoelectronics field including the following, but not limited to:

  • Electronic properties and devices:
    • Transistors, resistors, memory, magnetic, spintronic, sensor, diodes, piezoelectric, etc;
  • Optoelectronic properties and devices:
    • Phototransistors, photodetectors, LEDs, Solar cells, transparent conductors, etc;
  • Optical properties include excitonic, plasmonic, photonic, spectroscopic, magneto-optic, etc;
  • Magnetic, spintronic, and other novel physical properties.

A rapid publication (post-submission first decision in 12.7 days) and sincere attention to your manuscript will be provided. We look forward to receiving your exciting submissions.

Dr. Chandan Biswas
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum nanomaterials
  • nanoelectronics
  • optoelectronics
  • graphene: graphite oxide
  • transition-metal dichalcogenide
  • hexagonal boron nitride
  • quantum dots
  • nanoparticles
  • nanowires

Published Papers (1 paper)

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Research

14 pages, 3068 KiB  
Article
Electron Spin–Lattice Relaxation of Substitutional Nitrogen in Silicon: The Role of Disorder and Motional Effects
by Matteo Belli and Marco Fanciulli
Nanomaterials 2024, 14(1), 21; https://doi.org/10.3390/nano14010021 - 20 Dec 2023
Viewed by 711
Abstract
In a previous investigation, the authors proposed nitrogen as a possible candidate for exploiting the donor spin in silicon quantum devices. This system is characterized by a ground state deeper than the other group V impurities in silicon, offering less stringent requirements on [...] Read more.
In a previous investigation, the authors proposed nitrogen as a possible candidate for exploiting the donor spin in silicon quantum devices. This system is characterized by a ground state deeper than the other group V impurities in silicon, offering less stringent requirements on the device temperature necessary to access the unionized state. The nitrogen donor is slightly displaced from the substitutional site, and upon heating, the system undergoes a motional transition. In the present article, we show the results from our investigation on the spin–relaxation times in natSi and 28Si substrates and discuss the motional effects on relaxation. The stretched exponential relaxation observed is interpreted as a distribution of spin–lattice relaxation times, whose origin is also discussed. This information greatly contributes to the assessment of a nitrogen-doped silicon system as a potential candidate for quantum devices working at temperatures higher than those required for other group V donors in silicon. Full article
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