2D Nanomaterials for Optoelectronic Devices—II

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 1947

Special Issue Editor


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Guest Editor
Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg−Essen, Duisburg, Germany
Interests: 2D materials; light emitters; quantum dots; photoluminescence of nanostructures; optoelectronics
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Special Issue Information

Dear Colleagues,

2D materials have turned out to be a very exciting playground for the next generation of optoelectronic devices. This is fostered by their unique characteristics: They are mechanically robust, but flexible, and as van der Waals materials they can be integrated into a great variety of architectures without lattice constraints. They exhibit strong light-matter interaction; however they are fairly transparent due to their atomic-scale thickness. By taking benefit from their valley degree of freedom innovative devices with e.g. controlled helicity of emitted light can be developed. The large surface can be used to add enhanced functionalities to light sensors like sensitivity to the surrounding or gas detection. Many more promising concepts are emerging daily, stimulating a highly inventive research field. With the rise of industrial methods to produce 2D materials and heterostructures on large scale, recent works presented important steps on the way from lab to fab, but many challenges still have to be met, e.g. increasing quantum efficiencies or avoiding carrier losses during injection/extraction. Theoretical understanding of transport and recombination mechanisms and the role of defects is an indispensable requirement to develop new and innovative devices.

The purpose of the present Special Issue is to present state-of-the-art research on optoelectronic devices based on 2D materials. It shall collect exciting concepts, theoretical background, relevant material synthesis and characterization, and of course novel devices by leading groups in the research community.

Dr. Tilmar Kümmell
Guest Editor

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Keywords

  • 2D materials
  • transition metal dichalkogenide (TMDC)
  • light emitting devices
  • photodetectors
  • phototransistors
  • van der Waals heterostructures

Published Papers (1 paper)

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Research

14 pages, 1970 KiB  
Article
Engineering Multicolor Radiative Centers in hBN Flakes by Varying the Electron Beam Irradiation Parameters
by Federica Bianco, Emilio Corte, Sviatoslav Ditalia Tchernij, Jacopo Forneris and Filippo Fabbri
Nanomaterials 2023, 13(4), 739; https://doi.org/10.3390/nano13040739 - 15 Feb 2023
Cited by 3 | Viewed by 1730
Abstract
Recently, hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. In this work, multicolor radiative emissions are engineered and tailored by position-controlled low-energy electron irradiation. Varying the irradiation parameters, such as the electron beam energy and/or [...] Read more.
Recently, hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. In this work, multicolor radiative emissions are engineered and tailored by position-controlled low-energy electron irradiation. Varying the irradiation parameters, such as the electron beam energy and/or area dose, we are able to induce light emissions at different wavelengths in the green–red range. In particular, the 10 keV and 20 keV irradiation levels induce the appearance of broad emission in the orange–red range (600–660 nm), while 15 keV gives rise to a sharp emission in the green range (535 nm). The cumulative dose density increase demonstrates the presence of a threshold value. The overcoming of the threshold, which is different for each electron beam energy level, causes the generation of non-radiative recombination pathways. Full article
(This article belongs to the Special Issue 2D Nanomaterials for Optoelectronic Devices—II)
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