Nanostructured Oxide Semiconductor Materials: Structure, Properties, and Applications
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (10 February 2024) | Viewed by 1014
Special Issue Editor
Special Issue Information
Dear Colleagues,
Nanostructured oxide semiconductor materials have garnered significant attention due to their unique properties and versatile applications. These materials are characterized by their engineered nanoscale architecture, which imparts distinctive electronic, optical, and catalytic properties. Nanostructured oxide semiconductors present both exciting opportunities and complex challenges. Precise control over oxide semiconductors' nanoscale structure and morphology can be challenging. Achieving uniformity in size, shape, and distribution of nanostructures is essential for obtaining consistent and reproducible properties. Moreover, understanding the impact of defects, impurities, and surface states on the material's behavior is crucial for optimizing performance. The integration of these materials into functional devices necessitates compatibility with existing technologies and materials, requiring innovative fabrication methods.
This Special Issue aims to provide a comprehensive platform for researchers to share their latest insights, findings, and innovations in the realm of nanostructured oxide semiconductor materials. Contributions that uncover novel synthesis methods, delve into the fundamental structural aspects, elucidate the intriguing properties arising at the nanoscale, and explore the wide spectrum of applications these materials offer are welcome. The potential of nanostructured oxide semiconductor materials is vast, from electronic and optoelectronic devices to energy storage systems and catalytic applications.
Dr. Chun-Ying Huang
Guest Editor
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- oxide semiconductors
- structure
- morphology
- defects
- synthesis methods
- applications
- photodetectors
- LEDs
- solar cells
- gas sensors
